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NJRC[New Japan Radio]
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| Part No. |
NJG1535HD3
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| OCR Text |
...unction, and can be operated by 1 bit control signal for RF port. The ultra small & ultra thin USB6-D3 package is adopted. s FEATURES q Low ...7.5 210 7.5 -40~+85 -55~+150 UNITS dBm V mW V C C
s ELECTRICAL CHARACTERISTICS (General condition... |
| Description |
SPDT SWITCH GaAs MMIC
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| File Size |
205.08K /
12 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FSU01LG
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| OCR Text |
...eliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating ch... |
| Description |
General Purpose GaAs FET
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| File Size |
104.27K /
5 Page |
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MIMIX BROADBAND INC
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| Part No. |
CFS0103-SB08 CFS0103-SB-0G00
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| OCR Text |
1-10.0 ghz low noise, medium power phemt in a surface mount plastic package page 1 of 8 mimix broadband, inc., 10795 rockley rd., houston, ...7 db vds=2v, ids=20ma 20.8 db vds=3v, ids=20ma 21.1 db vds=3v, ids=40ma 22.4 db f=2ghz vds=2v, ids=1... |
| Description |
0.1-10.0 GHz Low Noise, Medium Power X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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| File Size |
235.56K /
8 Page |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FMM5823X
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| OCR Text |
...ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level Item Symbol Test Conditions ESD
Note : Bas...7 8 9 Drain Voltage [V] G1dB 17.7GHz 21.2GHz 25GHz 27GHz P1dB 34 32 30
P1dB [dBm] 34 32 30 28 26 24... |
| Description |
K-Band Power Amplifier MMIC
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| File Size |
419.21K /
15 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM3742-25UL
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| OCR Text |
...
UNIT mS V A V C/W
MIN. -1.0 -5
TYP. 5000 -2.5 14.4 1.2
MAX. -4.0 1.5
u The information contained herein is presented ...7 3.8 3.9 4 4.1 4.2 4.3 4.4 Frequency (GHz)
VDS= 10V IDS 6.8A Pin= 34.0dBm
Output Power vs. Inpu... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
44.60K /
4 Page |
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it Online |
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Price and Availability
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