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  1.4v s Datasheet PDF File

For 1.4v s Found Datasheets File :: 59727    Search Time::4.734ms    
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    ICM7228 ICM7228AIBI ICM7228AIJI ICM7228AIPI ICM7228AMJI883B ICM7228BIBI ICM7228BIJI ICM7228BIPI ICM7228BMJI883B ICM7228C

INTERSIL[Intersil Corporation]
Part No. ICM7228 ICM7228AIBI ICM7228AIJI ICM7228AIPI ICM7228AMJI883B ICM7228BIBI ICM7228BIJI ICM7228BIPI ICM7228BMJI883B ICM7228CIBI ICM7228CIJI ICM7228CIPI ICM7228CMJI883B ICM7228DIBI ICM7228DIJI ICM7228DIPI ICM7228DMJI883B FN3160
OCR Text ...ion 1999 File Number 3160.1 9-17 ICM7228 Pinouts ICM7228A (CERDIP, PDIP, sOIC) COMMON ANODE TOP VIEW sEG c 1 sEG e 2 sEG b 3 D...4V, VIH = +2.4V Write Pulsewidth (Low), tWL Write Pulsewidth (High), tWH Mode Hold Time, tMH Mode se...
Description CA-BAYONET
8-Digit, Microprocessor- Compatible, LED Display Decoder Driver
8-Digit, Microprocessor-Compatible, LED Display Decoder Driver
8-Digit Microprocessor- Compatible LED Display Decoder Driver
From old datasheet system

File Size 98.73K  /  17 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110s IR2110sPBF IR2113PBF IR2113s IR2113sPBF
OCR Text ...board layout. www.irf.com 1 IR2110(s)/IR2113(s) & (PbF) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limi...4V to -VBs. (Please refer to the Design Tip DT97-3 for more details). Note 2: When VDD < 5V, the min...
Description HIGH AND LOW sIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...GE) sOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper EsD Handli...4V 0 0 25 50 75 100 VDs, DRAIN TO sOURCE VOLTAGE (V) 125 VGs = 5V IRF234, IRF235 100 10 VDs, D...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOsFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOsFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, si, POWER, MOsFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305s
OCR Text ...0 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...4V V D s = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A ...
Description Power MOsFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOsFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...0 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...4V V D s = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A ...
Description Power MOsFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...GE) sOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper EsD Handling Pr...4V VGs = 6V VGs = 5V 1 0 0 -10 -20 -30 -40 -50 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOsFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ... source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDs Drain to Gate Volta...4V 0 0 -10 -20 -30 -40 VDs, DRAIN TO sOURCE VOLTAGE (V) -50 FIGURE 4. FORWARD BIAs sA...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOsFET(6A, 100V, 0.600 惟, P娌?????MOs?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOsFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOsFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1s9540sM FN2282
OCR Text ...sM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITs V V A A A V W W/oC mJ oC oC oC Drain to source Voltage (Note 1) . . . . ....4V -40 -50 1 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAs sAFE OPERATING AREA ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, si, POWER, MOsFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOsFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, si, POWER, MOsFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOsFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text 1.500 Ohm, P-Channel Power MOsFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOsFET de...4V 0 0 -10 -20 -30 -40 -50 -0.1 -1 VDs, DRAIN TO sOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAs ...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOsFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOsFET
3.5A 200V 1.500 Ohm P-Channel Power MOsFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...-7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJ...4V V Ds = -2 8V 16 C , C a p a c ita n c e (p F ) 500 C is s C os s 400 12 300 ...
Description -55V single P-Channel HEXFET Power MOsFET in a TO-220AB package
Power MOsFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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