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TOSHIBA
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| Part No. |
TC59LM806CFT TC59LM814CFT
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| OCR Text |
1/39 rev 1.1 toshiba mos digital integrated circuit silicon monolithic 256mbits network fcram1 ? 4,194,304-words 4 banks 16-bits ? 8,388,608-words 4 banks 8-bits description network fcram tm is double dat... |
| Description |
Network FCRAMTM
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| File Size |
454.13K /
39 Page |
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TOSHIBA
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| Part No. |
TC59LM806CFTI TC59LM814CFTI
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| OCR Text |
1/38 rev 1.0 tentative toshiba mos digital integr ated circuit silicon monolithic 256mbits network fcram1 (i-version) ? 8,388,608-words 4 banks 8-bits ? 4,194,304-words 4 banks 16-bits description network fcra... |
| Description |
Network FCRAMTM
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| File Size |
447.19K /
38 Page |
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http://
NEC, Corp.
NEC Corp.
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| Part No. |
UPD23C64040JLGX-XXX UPD23C64080JLGY-XXX-MKH
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| OCR Text |
...3 a2 a1 a0 /ce gnd gnd o15, a ? 1 o7 o14 o6 o13 o5 o12 o4 v cc v cc nc o11 o3 o10 o2 o9 o1 o8 o0 /oe or oe or dc gnd gnd 1 2 3 4 5 6 7 8 9 1...388,608 words by 8 bits address input buffer x-decoder logic/input input buffer y-decoder a19 o14 o1... |
| Description |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）页面访问模式
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| File Size |
269.65K /
24 Page |
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NEC Corp.
NEC, Corp.
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| Part No. |
UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MKH
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| OCR Text |
...3 a2 a1 a0 /ce gnd gnd o15, a ? 1 o7 o14 o6 o13 o5 o12 o4 v cc v cc nc o11 o3 o10 o2 o9 o1 o8 o0 /oe or oe or dc gnd gnd 1 2 3 4 5 6 7 8 9 1...388,608 words by 8 bits address input buffer x-decoder logic/input input buffer y-decoder a19 o14 o1... |
| Description |
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:12; No. Strands x Strand Size:7 x 20; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:40uF; Conductor Material:Copper RoHS Compliant: Yes
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）
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| File Size |
253.54K /
20 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
MH8S64AQFC-6L MH8S64AQFC-7
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| OCR Text |
...lock rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(program...388,608 - word by 64-bit)synchronousdram mitsubishi lsis ( / 55 ) 22.sep .2000 mit-ds-0374-0... |
| Description |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
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| File Size |
718.59K /
55 Page |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5M29FB800VP-12 M5M29FB800FP-10 M5M29FT800FP-10 M5M29FB800FP-12
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| OCR Text |
1 8,388,608-bit (1048,576-word by 8-bit / 524,288-word by16-bit) cmos 3.3v-only, block erase flash memory 1 mitsubishi lsis description the mitsubishi m5m29fb/t800fp, vp, rv are 3.3v-only high speed 8,388,608-bit cmos boot block flash me... |
| Description |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
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| File Size |
145.96K /
14 Page |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS42S83200A-75T IS42S83200A-75TL
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| OCR Text |
1-800-379-4774 1 rev. d 11/01/05 issi ? is42s83200a (4-bank x 8,388,608 - word x 8-bit) is42s16160a (4-bank x 4,194,304 - word x 16-bit) 256 mb synchronous dram description
is42s83200a is a synchronous 256mb sdram and is organized as ... |
| Description |
256 Mb Synchronous DRAM
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| File Size |
602.38K /
49 Page |
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Renesas Electronics Corporation.
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| Part No. |
M6MGB331S8AKT M6MGT331S8AKT
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| OCR Text |
1 33,554,432-bit (2,097,152 -word by 16-bit /4,194,304-word by 8-bit) cmos flash memory & 8,388,608-bit (524,288-word by 16-bit /1,048,576-word by 8-bit) cmos sram stacked- mcp (micro multi chip package) m6mgb/t331s8akt renesaslsis the m6m... |
| Description |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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| File Size |
123.81K /
3 Page |
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