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  1.25-ghz Datasheet PDF File

For 1.25-ghz Found Datasheets File :: 23998    Search Time::3.015ms    
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    AM42-0040

MACOM[Tyco Electronics]
Part No. AM42-0040
OCR Text ...s: (unless otherwise specified) 1. Dimensions are in inches. 2. Tolerance: .XXX = 0.005 .XX = 0.010 Ordering Information Part Number A...25 -30 -35 Input and Output Return Loss vs. Frequency S22 S11 3.0 3.5 4.0 4.5 ...
Description GaAs MMIC VSAT Power Amplifier/ 2W 5.9 - 6.4 GHz
GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz

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    AM50-0002 AM50-0002RTR AM50-0002SMB AM50-0002TR AM500002

MA-Com
MACOM[Tyco Electronics]
Part No. AM50-0002 AM50-0002RTR AM50-0002SMB AM50-0002TR AM500002
OCR Text 1.575 GHz Features q q q q q AM50-0002 V 2.00 SO-8 Low Noise Figure: 1.15 dB High Gain: 27 dB Low Power Consumption: 3 to 5 V, 2...25 Typ. 27 1.15 2.0:1 1.5:1 1 -14 48 20 25 Max. 29 1.4 Low Noise Amplifier AM50-0002 V 2.00 ...
Description 1.575 GHz, low noise amplifier
Low Noise Amplifier 1.575 GHz
Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:25-35 RoHS Compliant: No
LJT 128C 128#22 PIN RECP
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No

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    AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000

MA-Com
MACOM[Tyco Electronics]
Part No. AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000
OCR Text ... AM50-0015 employs a monolithic 1-stage self-biased design featuring a convenient 50 ohm input/ output impedance that minimizes the number o...25 C +3 V Parameter Gain2 Test Conditions F = 0.9 GHz F = 1.9 GHz F = 3.0 GHz F = 0.9 GHz F = 1.9 G...
Description 200-3000 MHz, miniature broadband gain stage
Miniature Broadband Gain Stage 200 - 3000 MHz

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    ASIS3028 S3028 ADVANCEDSEMICONDUCTORINC.-ASIS3028

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASIS3028 S3028 ADVANCEDSEMICONDUCTORINC.-ASIS3028
OCR Text ...S TJ TSTG Tsoldering 10 mA 50 V 1.5 W @ TC = 25 C -65 C to +150 C -65 C to +150 C +230 C for 30 Seconds CHARACTERISTICS SYMBOL VF VBR CJ6 CJ45 FC TC = 25 C TEST CONDITIONS IF = 100 mA IR = 10 A VR = 6.0 V VR = 45 V VR = 6.0 V &...
Description SILICON ABRUPT VARACTOR DIODE

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    ATF-10100 ATF-10100-GP3

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-10100 ATF-10100-GP3
OCR Text ... Parameters and Test Conditions[1] Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 80 70 -3.0 12.0 Min. Ty...
Description 0.5-12 GHz Low Noise Gallium Arsenide FET

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    ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text ...eel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect tr...25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GH...
Description ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET

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    ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text ...eel Packaging Option Available [1] Description The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect tr...25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GH...
Description ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ...utput Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape...25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GH...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text 1.1 dB Typical at 12 GHz * High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs...25 0.23 0.32 Ang 30 68 102 -165 -112 RN/50 0.32 0.21 0.15 0.09 0.21 ATF-13100 Typical Performance...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text 1.4 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effe...25 40 -4.0 55 50 -1.5 90 -0.5 1.6 GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA 8.0 P1 dB G1 d...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 41.75K  /  3 Page

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