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For 1 2 4m-bit Found Datasheets File :: 3223 Search Time::2.484ms
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				List of Unclassifed Manufacturers ETC
Part No.	SPCA514A
OCR Text	1. General description The chip provides a built-in 8051 CPU with USB interface to handle three types of flash memory: NAND-type, SPI and N...2. Feature ! ! ! ! ! ! ! ! Build-in 8032 micro-controller and 1K bytes Data RAM Support USB bus wit...
Description	Digital Audio USB Controller
File Size	109.47K / 14 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
Part No.	DS1216F DS1216C DS1216 DS1216B DS1216H DS1216D DS1216E
OCR Text	...o +70C Accuracy is better than 1 minute/month @ +25C ORDERING INFORMATION DS1216B, DS1216C, DS1216D, DS1216E, DS1216F, DS1216H (See Figure 2 for letter suffix marking identification.) RST 1 2 3 4 5 6 7 [A2] 8 9 [A0] 10 DQ0 11 12 13 G...
Description	SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F
File Size	331.08K / 13 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10
OCR Text	... standby current : 5 mA (max) : 1 mA (max) (L-version) * Data retension current : 0.6 mA (max) (L-version) * Data retension voltage : 2 V (min) (L-version) * Center VCC and VSS type pinout Preliminary: The specification of this device ar...
Description	4M High Speed SRAM (512-kword x 8-bit)
File Size	64.72K / 14 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511HI HM62W8511HJPI-15
OCR Text	1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circu...
Description	4M High Speed SRAM (512-kword x 8-bit)
File Size	61.93K / 13 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511H HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15
OCR Text	1.0 Sep. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circui...
Description	4M High Speed SRAM (512-kword x 8-bit)
File Size	67.93K / 13 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text	...atency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	125.82K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	...32B CMOS SDRAM Revision 0.1 (March 10, 2000) * * * * Deleted -80 Product Specification Changed the Current values of ICC5, ICC6 Changed tOH of -75 Product from 2.7ns to 3ns Changed the Bank select address in SIMPLIFIED TRUTH TABLE No...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text	1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S5616...2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	59.61K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text	1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES * 3.0V & 3.3V pow...2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * All inp...
Description	From old datasheet system IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC 16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
File Size	58.25K / 8 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text	...s key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * EMRS cycle with address key programs. * All inputs are sampled at the positive going edge of the system clock * ...
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
File Size	111.69K / 12 Page	View it Online	Download Datasheet

For 1 2 4m-bit Found Datasheets File :: 3223 Search Time::2.484ms
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