0.3ma pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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0.3ma Datasheet PDF File

For 0.3ma Found Datasheets File :: 14054 Search Time::1.985ms
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				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	... D VDSS = -100V RDS(on) = 0.117 G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	... D VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...l D VDSS = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	... VDSS = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fi...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				KODENSHI[KODENSHI KOREA CORP.] Kodenshi Corp
Part No.	K4N33
OCR Text	... 6-pin package. (Unit : mm) 0.25 6.4 FEATURES * Small Package Size * Collector-Emitter Voltage : Min.30V * Current Transfer Ratio...3mA 1 Collector Current IC (mA) 60 80 100 100 VCE=24V 0.1 I F=2mA 80 60 40 20 ...
Description	Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
File Size	223.79K / 3 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	... History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

For 0.3ma Found Datasheets File :: 14054 Search Time::1.985ms
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