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0760F 2405DH BC321 UNR1121 2J103K ISL9305H BPC25 11005
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  0.25a 50v Datasheet PDF File

For 0.25a 50v Found Datasheets File :: 1859    Search Time::1.828ms    
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    IRFP254B

Fairchild Semiconductor, Corp.
Part No. IRFP254B
OCR Text ... * * * * * 25A, 250v, RDS(on) = 0.14 @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! TO-3P G DS IRFP Series ! S A...
Description 250v N-Channel MOSFET 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 668.20K  /  8 Page

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    TF21918B TF21920B TF219 TF21914B TF21916B

DYNEX[Dynex Semiconductor]
Part No. TF21918B TF21920B TF219 TF21914B TF21916B
OCR Text 0 January 2000 APPLICATIONS s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloco...25A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7 7/13 TF219..B NOTES: 1. d...
Description    Fast Switching Thyristor

File Size 252.23K  /  13 Page

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    IRF3515SPBF

International Rectifier
Part No. IRF3515SPBF
OCR Text ...1) v dss r ds(on) max i d 150v 0.045 w 41a applicable off line smps topologies l telcom 48v input dc/dc active clamp reset forward convert...25a ? v gs(th) gate threshold voltage 3.0 CCC 4.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds =...
Description 150v Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 134.61K  /  10 Page

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    2SK3587-01MR

Fuji Electric
Part No. 2SK3587-01MR
OCR Text ...l to ambient 1.316 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs ...25a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7...
Description N-CHANNEL SILICON POWER MOSFET

File Size 93.78K  /  4 Page

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    IRGP20B120U-EP

International Rectifier
Part No. IRGP20B120U-EP
OCR Text ...G 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) C Thermal Resistance Parameter RJC RCS RJA Wt Z JC Jun...25A, VGE = 15V IC = 40A, VGE = 15V IC = 20A, VGE = 15V, TJ = 125C IC = 25A, VGE = 15V, TJ = 125C VCE...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 174.84K  /  10 Page

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    FS50KMJ-2

Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS50KMJ-2
OCR Text 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0...25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.82K  /  4 Page

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    FDP2710

Fairchild Semiconductor
Part No. FDP2710
OCR Text ...-to-Ambient Min --- Max 0.48 62.5 Unit C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com F...25A VDS = 10V, ID = 25A (Note 4) Min 250 -----3.0 ---- Typ -0.25 ----4.0 36.3 63 5470 426 9...
Description 250v N-Channel PowerTrench MOSFET

File Size 604.09K  /  8 Page

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    IRGBC40K-S

International Rectifier
Part No. IRGBC40K-S
OCR Text ... junction-to-case ------ ------ 0.77 r q ja junction-to-ambient, (pcb mount)** ------ ------ 40 c/w r q ja junction-to-ambient, typical sock...25a q ge gate - emitter charge (turn-on) ---- 13 19 nc v cc = 400v see fig. 8 q gc gate - collector...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

File Size 112.52K  /  7 Page

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    FS50KMJ-2

Mitsubishi Electric Semiconductor
Part No. FS50KMJ-2
OCR Text 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0...25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1...
Description HIGH-SPEED SWITCHING USE

File Size 41.76K  /  4 Page

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