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  0.0332 Datasheet PDF File

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    STQ2016-3

ETC
Part No. STQ2016-3
OCR Text ...onstant with output power ? +4.0 dbm output p1db ? wide baseband input, dc - 500 mhz ? superb phase accuracy and amplitude balance, 0.5 deg./0.2 db ? very low noise floor, -157 dbm/hz ? low acp, -65 dbc ? w-cdma transmitters product descr...
Description 700-2500 MHz Direct Quadrature Modulator

File Size 581.43K  /  16 Page

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    015-38-8100 0015388100

Molex Electronics Ltd.
Part No. 015-38-8100 0015388100
OCR Text ...angle vertical flammability 94v-0 material - metal phosphor bronze material - plating mating tin material - plating termination tin material - resin polyester alloy number of rows 1 orientation vertical pc tail...
Description 2.54mm (.100) C-Grid SL?/a> Single Row, Female, Version G Receptacle, 10 Circuits
2.54mm (.100) C-Grid SL Single Row, Female, Version G Receptacle, 10 Circuits

File Size 143.21K  /  3 Page

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    STN1NC60

STMicroelectronics
Part No. STN1NC60
OCR Text 0.3a - sot-223 powermesh?ii mosfet n typical r ds (on) = 12 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first gene...
Description N-CHANNEL MOSFET

File Size 194.29K  /  8 Page

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    STN1NB80

STMicroelectronics
Part No. STN1NB80
OCR Text 0.2a - sot-223 powermesh ? mosfet n typical r ds(on) =16 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process,...
Description N-CHANNEL MOSFET

File Size 107.40K  /  8 Page

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    STN1N20

STMicroelectronics
Part No. STN1N20
OCR Text ...ds drain-source voltage (v gs = 0) 200 v v dgr drain- gate voltage (r gs =20k w ) 200 v v gs gate-source voltage 20 v i d (*) drain current (continuous) at t c =25 o c1a i d (*) drain current (continuous) at t c =100 o c 0.6 a i dm ( ? ) d...
Description N-CHANNEL MOSFET

File Size 66.40K  /  6 Page

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    STN1HNC60

STMicroelectronics
Part No. STN1HNC60
OCR Text 0.4a - sot-223 powermesh?ii mosfet n typical r ds (on) = 7 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first gener...
Description N-CHANNEL MOSFET

File Size 197.81K  /  8 Page

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    STN1A60 STN1A80

SemiWell Semiconductor
Part No. STN1A60 STN1A80
OCR Text ... on-state current t c = 58 c 1.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 9.1/10 a i 2 t i 2 t 0.41 a 2 s p gm peak gate power dissipation 1.0 w p g(av) average gate power dissipation 0.1 w i gm peak gate ...
Description (STN1A60 / STN1A80) Bi-Directional Triode Thyristor

File Size 512.96K  /  6 Page

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    015-38-8130 70430-0152

Molex Electronics Ltd.
Part No. 015-38-8130 70430-0152
OCR Text ...angle vertical flammability 94v-0 material - metal phosphor bronze material - plating mating tin material - plating termination tin material - resin polyester alloy number of rows 1 orientation vertical pc tail...
Description 2.54mm (.100) C-Grid SL?/a> Single Row, Female, Version G Receptacle, 13 Circuits
2.54mm (.100) C-Grid SL Single Row, Female, Version G Receptacle, 13 Circuits

File Size 143.21K  /  3 Page

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    意法半导
Part No. STLC3040
OCR Text ...sis- tance and current limiting 0 to 70ma (1.1ma steps). programmable voltage drop ac- cording to ttx/on hook transmis- sion needs. integrated ring generator with zero crossing and programmable freq/level. support normal loop start lines, g...
Description Third Generation Subscriber Line Interface(用户线接

File Size 129.88K  /  8 Page

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    SANYO
Part No. STK672-060
OCR Text ...bed or contained herein. 122 53.0 0.5 2.0 22.0 9.0 0.4 2.9 4.0 1.0 21 2 = 42 sanyo: sip22 [stk672-060] notes *: conditions: v cc 1 = 24 v, i oh = 1.2 a, 2w1-2 excitation mode no. 7441- 2 /19 stk672-060 ? to match the motor characteristic...
Description Stepping Motor Drivers

File Size 243.66K  /  19 Page

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