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  0.0065 Datasheet PDF File

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    TOSHIBA
Part No. 1SS384
OCR Text ...l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Unit: mm Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power d...
Description Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching

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    TOSHIBA
Part No. 1SS391
OCR Text ...tage l Small package : VF (2) = 0.23V (typ.) @IF = 5mA : SC-61 Unit: mm Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms)...
Description Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching

File Size 126.42K  /  4 Page

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    TOSHIBA
Part No. 1SS402
OCR Text ...ll total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5A (max) : CT = 3.9pF (typ.) Unit in mm Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current...
Description Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications

File Size 114.48K  /  3 Page

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    TOSHIBA
Part No. 1SV309
OCR Text ...0 MHz Test Condition Weight: 0.0014 g (typ.) Min 30 3/4 3.31 0.61 5.0 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.2 Max 3/4 10 4.55 0.77 6.5 2.0 Unit V nA pF pF 3/4 W Note 1: Unites are compounded in one package and are matched to 6.0%. C (max) -...
Description Diode Silicon Epitaxial Planar Type UHF SHF Tuning

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    TOSHIBA
Part No. 1SV314
OCR Text ... V / C2.5 V = 2.5 (Typ.) : rs = 0.35 (Typ.) Unit: mm l Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 10 125 -55~125 UNIT...
Description DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO

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    1SV316

Sanyo Semicon Device
Part No. 1SV316
OCR Text ...ll interterminal capacitance (C=0.23pF typ). Electrical Connection Cathode / Anode 3 Package Dimensions unit:mm 1251A [1SV316] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Anode 2 Cathode 0.5 1.5 2.5 Specifications ...
Description VARIABE RESISTANCE ATTENUATOR USE

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    Microchip
Part No. 24LC256ISM 24LC256IP 24LC256ESM 24LC256EP
OCR Text ...3C-page 1 24AA256/24LC256 1.0 1.1 ELECTRICAL CHARACTERISTICS Maximum Ratings* TABLE 1-1 Name VSS SDA SCL WP VCC PIN FUNCTION TABLE Function Ground Serial Data Serial Clock Write Protect Input +1.8 to 5.5V (24AA256) +2.5 to ...
Description 256KI2CCMOSSerialEEPROM

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    2N2218 SF_2N2218 SF2N2218

SemeLAB
SEME-LAB[Seme LAB]
http://
Part No. 2N2218 SF_2N2218 SF2N2218
OCR Text 0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. ...
Description BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE.

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    Central Semiconductor
Part No. 2N2405 2N2479 2N2192B 2N1983 2N1984 2N2800 2N1987 2N2594 2N2270 2N1975 2N2049 2N1985 2N1986 2N1988 2N1989 2N2017 2N2107 2N2193B 2N2195B 2N2297 2N2303 2N2380A 2N2410 2N2476 2N2477 2N2657 2N2658 2N2801
OCR Text ...O **ICES ***ICEV ****ICER MIN 7.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 3.0 6.0 7.0 7.0 6.0 6.0 6.0 5.0 6.0 5.0 6.0 6.0 6.0 7.0 7.0 7.0 5.0 5.0 5.0 7.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 7.0 6.0 6.0 5.0 5.0 0.025 5.00 5.00 5.00 5.00 5.00 5.00 5.00 10 10 0.1...
Description Leaded Small Signal Transistor General Purpose

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    Central Semiconductor
Part No. 2N2609 2N4220 2N2608 PN3685 PN4303
OCR Text 0 2.0 2.5 0.6 0.8 1.3 2.0 1.0 1.5 2.0 --1.5 1.0 0.5 1.0 2.0 1.0 10 20 40 5.0 15 30 60 50 50 50 --25 10 5.0 50 50 50 Ciss (pF) MAX 6.0 6.0 6.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 6.0 6.0 4.0 4.0 4.0 6.0 6.0 6.0 Crss (pF) MAX 2.0 2.0 2.0 3.0 3.0 3.0 ...
Description Leaded JFET General Purpose

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