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  -55 125c Datasheet PDF File

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    意法半导
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M54HC126 M54HC125 M74HC126B1R M54HC125K M74HC126M1R M54HC125B1R M54HC125c1R M54HC125D M54HC125D1 M54HC125F1R M54HC125M1R M54HC126B1R M54HC126C1R M54HC126F1R M54HC126M1R M74HC125 M74HC125B1R M74HC125c1R M74HC125F1R M74HC125M1R M74HC126 M74HC126C1R M74HC126F1R M54HC125K1 -M74HC126C1R
OCR Text ...Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns DC SPECIFICATIONS Test Condition Symbol Para...125c Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit VIH High Level Input Voltage Low Level Input V...
Description CAP 100PF 100V 10% CH-TC SMD-0603 TR-7-PA
QUAD BUS BUFFERS 3-STATE
From old datasheet system
RAD-HARD QUAD BUS BUFFER (3-STATE)

File Size 116.42K  /  9 Page

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    CYStech Electronics
Part No. BTA1013K3
OCR Text ...unction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : pulse test, p w 10ms, duty 50%. ...125c ta=75c ta=25c ta=0c ta=-40c vce=-5v s a tu r a ti o n v o ltag e v s c o ll ect o r c u ...
Description PNP Epitaxial Planar Transistor

File Size 326.00K  /  7 Page

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    M74VHC1G126DFT1G M74VHC1G126DFT2G MC74VHC1G126DFT1 MC74VHC1G126DFT2 MC74VHC1G126DTT1 MC74VHC1G126 M74VHC1G126DTT1G

ONSEMI[ON Semiconductor]
Part No. M74VHC1G126DFT1G M74VHC1G126DFT2G MC74VHC1G126DFT1 MC74VHC1G126DFT2 MC74VHC1G126DTT1 MC74VHC1G126 M74VHC1G126DTT1G
OCR Text ...haracteristics Min 2.0 0.0 0.0 -55 0 0 Max 5.5 5.5 VCC +125 100 20 Unit V V V C ns/V Device Junction Temperature versus Time to 0.1% Bond...125c Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 Max Unit V VIL Maximum Low-Level Input Voltage ...
Description Noninverting 3&#8722;State Buffer AHC/VHC SERIES, 1-BIT DRIVER, TRUE OUTPUT, PDSO5
NONINVERTING 3−STATE BUFFER

File Size 75.43K  /  6 Page

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    MC14001UBDG MC14001UBCPG MC14011UBCPG MC14011UBDG MC14011UBDR2G MC14011UBDR2 MC14001UB MC14001UBCP MC14001UBD MC14001UBD

ONSEMI[ON Semiconductor]
Part No. MC14001UBDG MC14001UBCPG MC14011UBCPG MC14011UBDG MC14011UBDR2G MC14011UBDR2 MC14001UB MC14001UBCP MC14001UBD MC14001UBDR2 MC14001UBDR2G MC14011UBCP MC14011UBD MC14011UB
OCR Text ...18.0 -0.5 to VDD + 0.5 10 500 -55 to +125 -65 to +150 260 Unit V V mA mW C C C xx A WL, L YY, Y WW, W = Specific Device Code = Assemb...125c b TA = -55C a b 6.0 4.0 2.0 0 0 5.0 Vdc ab 0 2.0 4.0 6.0 8.0 10 12 14 16 Vin, INPUT VO...
Description UB-Suffix Series CMOS Gates 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDSO14
UB-Suffix Series CMOS Gates 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDIP14
UB-Suffix Series CMOS Gates 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDIP14
UB-Suffix Series CMOS Gates(UB后缀系列CMOS

File Size 122.09K  /  8 Page

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    MIC49500-0.9WR MIC49500WU MIC49500 MIC49500-0.9WU MIC49500-1.2WR MIC49500-1.2WU MIC49500WR

MICREL INC
Micrel Semiconductor,Inc.
Part No. MIC49500-0.9WR MIC49500WU MIC49500 MIC49500-0.9WU MIC49500-1.2WR MIC49500-1.2WU MIC49500WR
OCR Text ... -2 -0.1 0.2 145 290 1.5 1.7 55 55 0.1 30 70 5.5 7.5 1.2 1.15 +2 +0.1 1.0 300 500 2.0 2.1 90 5 50 120 9.5 Enable Input Enable Inp...125c 0.693 Reference Voltage (Adjustable Output Only) 0.7 0.686 0.714 November 2005 ...
Description 5A DUAL SUPPLY, LOW VOLTAGE, HIGH BANDWIDTH LDO

File Size 229.90K  /  11 Page

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    Alpha & Omega Semicondu...
Part No. AOL1436-08
OCR Text 55 r jc 2.5 3.5 mj w 22 c 43 w 118 drain-source voltage v 30 28 a 50 48 a i d 120 continuous drain current b maximum units parameter t c ...125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistanc...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 134.37K  /  6 Page

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    NTD4805N-1G NTD4805NT4G NTD4805N-35G NTD4805N

ONSEMI[ON Semiconductor]
Part No. NTD4805N-1G NTD4805NT4G NTD4805N-35G NTD4805N
OCR Text ... 12.6 9.8 1.35 88 68 66 175 45 -55 to 175 55 6.0 288 W A A C A V/ns mJ W A W Unit V V A N-Channel G S 4 4 4 A 12 3 CASE 369C DPAK (Ben...125c VGS = 0 V, ID = 250 mA 30 27 1.0 10 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit ...
Description POWER MOSFET 30 V, 88 A, SINGLE N−CHANNEL, DPAK/IPAK

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4016T3F K6X4016T3F-TQ85 K6X4016T3F-B K6X4016T3F-F K6X4016T3F-Q K6X4016T3F-TB55 K6X4016T3F-TB70 K6X4016T3F-TB85 K6X4016T3F-TF55 K6X4016T3F-TF70 K6X4016T3F-TF85 K6X4016T3F-TQ70
OCR Text ...AW tWP tWR tWHZ tDW tDH tOW tBW 55 10 5 5 10 0 0 0 55 45 0 45 40 0 0 25 0 5 45 Max 55 55 25 25 20 20 20 20 Min 70 10 5 5 10 0 0 0 70 60 0 60 55 0 0 30 0 5 60 70ns Max 70 70 35 35 25 25 25 25 Min 85 10 5 5 10 0 0 0 85 70 0 70 60 0 0 35 0 5 7...
Description 256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM

File Size 136.97K  /  9 Page

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    DMN53D0L-7 DMN53D0L-13 DMN53D0L

Diodes Incorporated
Part No. DMN53D0L-7 DMN53D0L-13 DMN53D0L
OCR Text ...mperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteri...125c a t = 25c a t = -55c a t = 85c a i , drain-source current (a) d figure 3 typical on-resist...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 322.64K  /  5 Page

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