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  w-cdma Datasheet PDF File

For w-cdma Found Datasheets File :: 3991    Search Time::3.5ms    
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    MRF8S19260HR6 MRF8S19260HSR6

Freescale Semiconductor, Inc
Part No. MRF8S19260HR6 MRF8S19260HSR6
OCR Text ...mats. ? typical single--carrier w--cdma performance: v dd =30volts,i dq = 1600 ma, p out = 74 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%)...
Description RF Power Field Effect Transistors

File Size 502.42K  /  14 Page

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    LT5572EUF LT5572

Linear Technology
Part No. LT5572EUF LT5572
OCR Text ...EDGE, TD-SCDMA, CDMA, CDMA2000, w-cdma and other systems. It may also be configured as an image reject up-converting mixer by applying 90 phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage...
Description 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator

File Size 303.94K  /  16 Page

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    GRM55DR61H106KA88B MD7IC21100N12 ATC100B0R5CT500XT ATC100B100JT500XT ATC100B1R2CT500XT ATC100B5R1CT500XT GRM32EER72A105K

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. GRM55DR61H106KA88B MD7IC21100N12 ATC100B0R5CT500XT ATC100B100JT500XT ATC100B1R2CT500XT ATC100B5R1CT500XT GRM32EER72A105KA01L CRCW12064701FKEA CRCW12102R00FKEA GRM32NR72A104KA01B MD7IC21100NBR1 MD7IC21100GNR1
OCR Text ...cdma. ? typical single--carrier w--cdma performance: v dd =28volts,i dq1a + i dq1b = 190 ma, i dq2a +i dq2b = 925 ma, p out = 32 watts avg., f = 2167.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0....
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,067.52K  /  22 Page

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    MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1

Freescale (Motorola)
MOTOROLA[Motorola, Inc]
Part No. MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
OCR Text ...: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD -- - 32 dBc Drain Effic...
Description GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers

File Size 579.33K  /  12 Page

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    MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230

MOTOROLA[Motorola, Inc]
Part No. MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230
OCR Text ...egrated circuit is designed for W - CDMA base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 160...
Description MW4IC2230MBR1, MW4IC2230GMBR1 w-cdma 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers

File Size 656.88K  /  12 Page

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    Motorola
Part No. MW5IC2030
OCR Text ..., GSM EDGE, TDMA, PHS, CDMA and W - CDMA. Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Pow...
Description GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier 

File Size 442.03K  /  12 Page

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    AP205A

RFHIC
Part No. AP205A
OCR Text ... AP205A Application * CDMA, w-cdma Medium Power Amplifier * High Linearity Drive Amplifier Package Type: SOT-89 Description AP205A is a high linearity amplifier designed with GaAs MMIC in a low cost SOT-89 package. It is designed...
Description MMIC

File Size 266.51K  /  7 Page

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    Keysight Technologies
Part No. N7600B
OCR Text w-cdma, hspa and hspa+ 3gpp release 11 C perform ue and bts component testing with a broad collection of predefned 3gpp physical layer dl test models and ul sub-tests C use predefned reference measurement channels (rmc) and fxed refer...
Description    Signal Studio for w-cdma/HSPA

File Size 2,032.02K  /  13 Page

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    椋???″????浣?涓??)??????
Part No. MRF6S19100HSR3
OCR Text ...c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 900 ma, p out = 22 watts avg., full frequency band, is - 95 (pilot, sync, paging, traffic codes 8 through 13) channel...
Description RF Power Field Effect Transistors

File Size 388.18K  /  12 Page

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    MOTOROLA INC
Part No. MRF5S19100LR3
OCR Text ... above 25 c p d 236 1.35 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal chara...cdma 28 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 mrf5s19100lr3 case 465a?06,...
Description L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 609.14K  /  12 Page

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