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For tsp Found Datasheets File :: 1535 Search Time::8.469ms
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				NXP Semiconductors N.V.
Part No.	PMEG4010ER10 PMEG4010ER
OCR Text	... = 0.5; f = 20 kHz Tamb 115 C tsp 140 C VR VF IR [1] [1] Min Typ Max Unit - 430 10 1 1 40 490 50 A A V mV A reverse voltage forward voltage reverse current IF = 1 A VR = 40 V Device mounted on a ceramic Pr...
Description	1 A low V_F MEGA Schottky barrier rectifier 1 A, 40 V, SILICON, SIGNAL DIODE 1 A low VF MEGA Schottky barrier rectifier
File Size	139.36K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	SI2302DS
OCR Text	...ata Conditions Tj = 25 to 150 C tsp = 25 C; VGS = 4.5 V tsp = 25 C VGS = 4.5 V; ID = 3.6 A VGS = 2.5 V; ID = 3.1 A Typ - - - - 56 77 Max 20 2.5 0.83 150 85 115 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissip...
Description	From old datasheet system N-channel enhancement mode field-effect transistor
File Size	103.09K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHK18NQ03LT
OCR Text	...rce current peak source current tsp = 25 C tsp = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 31.5 A; tp = 0.07 ms; VDS 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C tsp = 25 C; VGS = 10 V; see Figure 2 and 3 tsp = 100 C; VGS...
Description	N-channel TrenchMOS logic level FET
File Size	86.42K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHK5NQ15T
OCR Text	...Ptot Quick reference Conditions tsp = 25 C; VGS = 10 V; see Figure 1 and 3 tsp = 25 C; see Figure 2 Min Typ Max 150 5 6.25 Unit V A W drain-source voltage Tj 25 C; Tj 150 C drain current total power dissipation gate-drain charge Symbol Pa...
Description	N-channel TrenchMOS standard level FET
File Size	187.20K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMEG3020CEP PMEG3020CEP-15
OCR Text	...; = 0.5; f = 20 kHz Tamb 95 C tsp 140 C VR VF IR [1] [1] Min Typ Max Unit - 365 0.6 2 2 30 420 1.5 A A V mV mA reverse voltage forward voltage reverse current IF = 2 A VR = 30 V Device mounted on a ceramic...
Description	2 A low VF MEGA Schottky barrier rectifier
File Size	83.71K / 13 Page	View it Online	Download Datasheet

				LOGIC Devices Incorpora... LODEV[LOGIC Devices Incorporated]
Part No.	LMA2009JC20 LMA2009JC45 LMA1009 LMA2009
OCR Text	... tDIS tENA tD tHP tsp tH tS tPW tMC tDIS tENA tD tHP tsp tH tS tPW tMC CLK R CLK A CLK B PREL R26-0 A11-0 B11-0 OE* Parameter Parameter Three-State Output Disab...
Description	12 x 12-Bit Multiplier-Accumulator(12 x 12位乘法器-累加
File Size	188.33K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMEG3020DEP PMEG3020DEP-15
OCR Text	...; = 0.5; f = 20 kHz Tamb 80 C tsp 135 C VR VF IR [1] [1] Min Typ Max Unit - 460 15 2 2 30 520 50 A A V mV A reverse voltage forward voltage reverse current IF = 2 A VR = 30 V Device mounted on a ceramic Pr...
Description	2 A low VF MEGA Schottky barrier rectifier
File Size	84.14K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHT4NQ10LT
OCR Text	...ata Conditions Tj = 25 to 150 C tsp = 25 C; VGS = 5 V tsp = 25 C VGS = 5 V; ID = 1.75 A Typ - - - - 200 Max 100 3.5 6.9 150 250 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-s...
Description	N-channel enhancement mode field-effect transistor
File Size	156.88K / 13 Page	View it Online	Download Datasheet

				Microchip Technology Inc
Part No.	24LC65
OCR Text	...ance Block Rest of Array TOF tsp TWR -- -- -- 10M 1M 250 50 5 -- -- 20 + 0.1 CB -- -- 10M 1M 250 50 5 -- -- ns ns (Note 2) Time the bus must be free before a new transmission can start (Note 1), CB 100 pF Note 3 ms/...
Description	SERIAL EEPROM,8KX8,CMOS,DIP,8PIN,PLASTIC From old datasheet system
File Size	75.24K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BSH114 BSH114-215
OCR Text	...ata Conditions Tj = 25 to 150 C tsp = 25 C; VGS = 10 V tsp = 25 C VGS = 10 V; ID = 0.5 A Typ - - - - 400 Max 100 0.85 0.83 150 500 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drai...
Description	N-channel enhancement mode field effect transistor N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
File Size	103.43K / 13 Page	View it Online	Download Datasheet

For tsp Found Datasheets File :: 1535 Search Time::8.469ms
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