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  transistor-npt Datasheet PDF File

For transistor-npt Found Datasheets File :: 154    Search Time::11.954ms    
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    GB100TS60NPBF

Vishay Siliconix
Part No. GB100TS60NPBF
OCR Text ...5173 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (100 = 100 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (s = int-a-pak) 6 - voltage rating (60 = 600 v) 8 - lead (pb)...
Description Ultrafast Speed IGBT

File Size 261.35K  /  9 Page

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    GB150TS60NPBF

Vishay Siliconix
Part No. GB150TS60NPBF
OCR Text ...5173 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (150 = 150 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (s = int-a-pak) 6 - voltage rating (60 = 600 v) 8 - lead (pb)...
Description Ultrafast Speed IGBT

File Size 262.61K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S2N120 HGT1S2N120CNS
OCR Text ...te conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and dr...
Description 45A, 600V, UFS Series N-Channel IGBT
13A 1200V NPT Series N-Channel IGBT

File Size 121.47K  /  8 Page

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    G5N120BND

Fairchild Semiconductor
Part No. G5N120BND
OCR Text ...e conduction loss of a bipolar transistor. the igbt used is the development type ta49308. the diode used is the development type ta49058 (part number rhrd6120). the igbt is ideal for many high voltage switching applications operating at...
Description HGTG5N120BND

File Size 196.95K  /  8 Page

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    HGT1S10N120BNST

Fairchild Semiconductor
Part No. HGT1S10N120BNST
OCR Text ...te conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and...
Description 35A, 1200V, NPT Series N-Channel IGBT

File Size 176.75K  /  8 Page

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    G20N120 HGTG20N120CND

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. G20N120 HGTG20N120CND
OCR Text ...te conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and dr...
Description 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(63A, 1200V, NPT 系列带超快二极管的N沟道绝缘栅双极型晶体 20 A, 1200 V, N-CHANNEL IGBT, TO-247
From old datasheet system
63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 92.05K  /  7 Page

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    HGTP5N120CN

Fairchild Semiconductor
Part No. HGTP5N120CN
OCR Text ...e conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and...
Description 25A, 1200V, NPT Series N-Channel IGBT

File Size 132.16K  /  8 Page

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    HGTP5N120BN

Fairchild Semiconductor
Part No. HGTP5N120BN
OCR Text ...e conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and...
Description 21A, 1200V, NPT Series N-Channel IGBTs

File Size 136.02K  /  8 Page

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    HGTG5N120CND HGTP5N120CND

Fairchild Semiconductor
Part No. HGTG5N120CND HGTP5N120CND
OCR Text ...te conduction loss of a bipolar transistor. the igbt used is developmental type ta49309. the diode used in anti-parallel is developmental type ta49058. the igbt is ideal for many high voltage switching applications operating at moderate ...
Description 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 150.76K  /  8 Page

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    HGTG10N120BND FN4579

Intersil Corporation
Part No. HGTG10N120BND FN4579
OCR Text ...te conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wher...
Description From old datasheet system
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 81.64K  /  7 Page

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For transistor-npt Found Datasheets File :: 154    Search Time::11.954ms    
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