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    PTB32001X PTB32003X PTB32005X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PTB32001X PTB32003X PTB32005X
OCR Text ...ATA Microwave performance up to tmb = 25 C in a common-base class B circuit. TYPE NUMBER PTB32001X PTB32003X PTB32005X MODE OF OPERATION CW CW CW 3 3 3 f (GHz) 24 24 24 VCC (V) PL (W) 1.3 2.5 4.5 WARNING Product and environmental safety - t...
Description NPN microwave power transistors

File Size 61.25K  /  12 Page

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    BUK7518-30

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7518-30
OCR Text ...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 30 30 16 55 38 220 103 175 UNIT V V V A A A W C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting ba...
Description TrenchMOS transistor Standard level FET

File Size 43.83K  /  8 Page

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    BUK7518-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7518-55
OCR Text ...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 16 57 40 228 125 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDI...
Description TrenchMOS transistor Standard level FET

File Size 63.29K  /  8 Page

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    PHD101NQ03LT PHB_PHD101NQ03LT-02 PHB101NQ03LT

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD101NQ03LT PHB_PHD101NQ03LT-02 PHB101NQ03LT
OCR Text ...e data Conditions 25 Tj 175 C tmb = 25 C; VGS = 5 V tmb = 25 C Tj = 25 C; VGS = 10 V; ID = 25 A Tj = 25 C; VGS = 5 V; ID = 25 A Typ 4.5 5.8 Max 30 75 166 175 5.5 7.0 Unit V A W C m m drain-source voltage (DC) drain current (DC) total powe...
Description From old datasheet system
TrenchMOS logic level FET
TrenchMOS⑩ logic level FET

File Size 85.66K  /  13 Page

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    PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 PHP108NQ03LT

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 PHP108NQ03LT
OCR Text ...ce (diode forward) current (DC) tmb = 25 C peak source (diode forward) current tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 43 A; tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 C tmb = 25 C; pulsed; tp 10 s...
Description TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

File Size 96.35K  /  14 Page

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    PHD10N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD10N10E
OCR Text ...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 100 100 30 11 7.7 44 60 175 175 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to moun...
Description PowerMOS transistor

File Size 76.23K  /  7 Page

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    PHD45N03LTA PHB45N03LTA PHP45N03LTA

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD45N03LTA PHB45N03LTA PHP45N03LTA
OCR Text ...ata Conditions Tj = 25 to 175 C tmb = 25 C; VGS = 5 V tmb = 25 C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 3.5 V; ID = 5.2 A Typ 13 17.5 22 Max 25 40 65 175 21 24 40 Unit V A W C m m m drain-source voltage (DC) drain current (DC) tot...
Description N-channel enhancement mode field-effect transistor 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 108.38K  /  14 Page

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    PTC4001T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PTC4001T
OCR Text ...ng temperature t < 10 s; note 1 tmb = 75 C CONDITIONS open emitter open base RBE = 70 open collector - - - - - - -65 - - MIN. PTC4001T MAX. 40 16 35 3 0.25 4 +200 200 235 UNIT V V V V A W C C C handbook, 5 MGD975 MGA02...
Description NPN microwave power transistor

File Size 46.76K  /  8 Page

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    BU4530AL

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4530AL
OCR Text ....26 UNIT V V A A W V A A s s tmb 25 C IC = 10 A; IB = 2.22A f = 32 kHz f = 90 kHz ICsat = 9.0 A; f = 32 kHz ICsat = 8.0 A; f = 90 kHz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c ...
Description Silicon Diffused Power Transistor

File Size 57.77K  /  6 Page

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    BU4530AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4530AW
OCR Text ...b.f UNIT V V A A W V A A s s tmb 25 C IC = 10.0 A; IB = 2.5 A f = 32 kHz f = 90 kHz ICsat = 10.0 A; f = 32 kHz ICsat = 8 A; f = 90 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION ...
Description Silicon Diffused Power Transistor

File Size 23.67K  /  4 Page

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