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				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STM1645-30
OCR Text	...(Tcase = 25 oC) Symb ol V PI N T STG TC DC Supply Voltage RF Input Power (P OUT 30 W ) Parameter Value 30 20 - 40 to + 100 -35 to + 70 Un ...Con ditio ns P IN 10 W P OUT = 30 W P OUT = 30 W P OUT = 30 W o o Min. 1625 30 34.8 35 T yp....
Description	RF POWER MODULE SATELLITE COMMUNICATION APPLICATIONS
File Size	42.14K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STM326-2 STM351-2 STM401-2 STM426-2 STM451-2 STM476-2 STM500-2 5997 STM376-2 -STM401-2
OCR Text	...z VOLTS N PUT/OUTPUT 50 OHMS OU T = 1.0 WAV G (2.0 W PEP) N = 21 dB CASE STYLE H170 DESCRIPTION The STM351-2 module is designed to be us...Con dition s Value Min. Typ. Max. Unit BW GP I CC( q) I CC I BB H IMD -- -- Frequency Range ...
Description	RF POWER MODULE WIRELESS LOCAL LOOP APPLICATIONS From old datasheet system
File Size	32.46K / 3 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP10NB50 STP10NB50FP
OCR Text	... 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Vol...Con ditions I D = 250 A V GS = 0 Min. 500 1 50 100 T yp. Max. Unit V A A nA V DS = Max Rating Ze...
Description	N - CHANNEL 500V - 0.55Ohms - 10.6A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerMESH MOSFET
File Size	104.45K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP10NC50 STP10NC50FP
OCR Text	... 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Vol...Con ditions I D = 250 A V GS = 0 Min. 500 1 50 100 T yp. Max. Unit V A A nA V DS = Max Rating Ze...
Description	N - CHANNEL 500V - 0.48Ohms - 10A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 500V - 0.48ohm - 10A - TO-220/TO-220FP PowerMESH MOSFET
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
Part No.	STP11NB40 STP11NB40FP 5322
OCR Text	...= 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Vo...Con ditions I D = 250 A V GS = 0 Min. 400 1 50 100 T yp. Max. Unit V A A nA V DS = Max Rating Ze...
Description	N-Channel 400V-0.48惟-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N娌??MOSFET) N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET From old datasheet system N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10.7A - TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
File Size	114.50K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP12PF06
OCR Text	... VGS ID ID I DM (*) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Dra...Con ditions I D = 250 A V GS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero...
Description	P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET
File Size	84.29K / 8 Page	View it Online	Download Datasheet

				http:// SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
Part No.	STP16NB25 STP16NB25FP 5962
OCR Text	... 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Vo...Con ditions I D = 250 A V GS = 0 Min. 250 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zer...
Description	N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET From old datasheet system N-CHANNEL Power MOSFET
File Size	104.12K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP22NE10L
OCR Text	...S ID ID I DM (*) P tot E AS (1) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Dr...Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zer...
Description	N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET
File Size	81.96K / 8 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP3020 STP3020L 6475
OCR Text	...V DGR V GS ID ID I DM (*) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage D...Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero...
Description	N - CHANNEL 30V - 0.019W - 40A - TO-220 STripFET POWER MOSFET N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET From old datasheet system N - CHANNEL 30V - 0.019 - 40A - TO-220 STripFET TM POWER MOSFET N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET N - CHANNEL POWER MOSFET
File Size	82.27K / 8 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP30NE03L STP30NE03LFP 6672
OCR Text	...V GS ID ID I DM (*) P tot V ISO T s tg Tj June 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage D...Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero...
Description	Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET N - CHANNEL 30V - 0.028 - 30A TO-220/TO-220FP STripFET TM POWER MOSFET From old datasheet system
File Size	104.22K / 9 Page	View it Online	Download Datasheet

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