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  rg-62 u Datasheet PDF File

For rg-62 u Found Datasheets File :: 3185    Search Time::1.313ms    
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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS12N60FT-O-F-N-B JCS12N60CT-O-C-N-B JCS12N60T
OCR Text ...GS =10V note 45 VDD=300V,ID=12A,RG=25 note 45 78 102 133 175 233 305 104 160 39 8.5 20 52 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTIC...62.5 Notes: 1Pulse width limited by maximum junction temperature 2L=11.2mH, IAS=12A, VDD=50V, RG=25...
Description N-CHANNEL MOSFET

File Size 1,123.07K  /  10 Page

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    IRF9530NPBF

International Rectifier
Part No. IRF9530NPBF
OCR Text ...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 118.12K  /  8 Page

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    SSP7N60 SSP7N60B SSS7N60B

FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Part No. SSP7N60 SSP7N60B SSS7N60B
OCR Text ... 5) VDD = 300 V, ID = 7.0 A, RG = 25 (Note 4, 5) -------- 30 80 125 85 38 6.4 15 70 170 260 180 50 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description 600V N-Channel MOSFET

File Size 912.76K  /  11 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ... VDD = 100V --- ID = 11A ns --- RG = 2.5 --- RD = 9.0, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of di...62 40 units C/W www.irf.com 2 IRF640N/S/L 100 I D , Drain-to-Source Current (A) ...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRFB9N30A

International Rectifier
Part No. IRFB9N30A
OCR Text ...VDD = 150V --- ID = 9.3A ns --- RG = 12 --- RD = 16,See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) ...
Description Power MOSFET(Vdss=300V/ Rds(on)=0.45ohm/ Id=9.3A)
Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)

File Size 133.18K  /  8 Page

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    IRL2910 L2910

International Rectifier
Part No. IRL2910 L2910
OCR Text ...- VDD = 50V --- ID = 29A ns --- RG = 1.4, VGS = 5.0V --- RD = 1.7, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package G --...62 (.103 ) 10.54 (.415 ) 10.29 (.405 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) -B4.69 (....
Description RES THICK FILM POWER 10 OHM 5W
HEXFET Power MOSFET

File Size 120.70K  /  8 Page

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    IRFB16N60LPBF

International Rectifier
Part No. IRFB16N60LPBF
OCR Text ...SS/TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Sourc...62 units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. (Se...
Description SMPS MOSFET

File Size 193.14K  /  9 Page

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    SSP45N20 SSP45N20B SSS45N20B

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. SSP45N20 SSP45N20B SSS45N20B
OCR Text ..., 5) VDD = 100 V, ID = 45 A, RG = 25 (Note 4, 5) -------- 45 340 360 270 133 19 67 100 690 730 550 173 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuou...
Description 200V N-Channel MOSFET

File Size 911.74K  /  10 Page

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    IRFB13N50APBF

International Rectifier
Part No. IRFB13N50APBF
OCR Text ... Starting TJ = 25C, L = 5.7mH, RG = 25, IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a) Pulse width 300s; duty cycle 2%. Coss eff. is a...62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions ...
Description SMPS MOSFET

File Size 170.47K  /  8 Page

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