rg-140 u pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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rg-140 u Datasheet PDF File

For rg-140 u Found Datasheets File :: 6360 Search Time::1.828ms
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				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...140 475 1050 1.5 - 105 135 275 175 1.9 55 45 0.76 1.2 V nC nC ns ns ns ns J J V ns ns oC/W oC...
Description	40A / 600V / uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...140 120 100 80 60 40 20 0 0 TJ = 150oC, RG = 10, VGE = 15V, L = 100H 40 30 20 10 0...
Description	3.3V 36-mc CPLD 45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTQ64N25 IXTQ64N25P IXTT64N25P
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150 G D S (TAB) TO-268 ...140 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes ...
Description	Discrete MOSFETs: Standard N-channel Types PolarHT Power MOSFET
File Size	573.67K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	uPA1552 uPA1552B uPA1552BH
OCR Text	... C, V DD = 30 V, VGS = 20 V 0, RG = 25 , L = 100 H The diode connected between the gate and source of the transistor serves as a protect...140 160 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VGS = 10...
Description	N-CHANNEL POWER MOS FET ARRAY SWITCHING uSE
File Size	82.63K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7380
OCR Text	...V VGS = 10V VDD = 40V ID = 2.2A RG = 24 VGS = 10V VGS = 0V VDS = 25V Conditions VDS = 25V, ID = 2.2A = 1.0MHz VGS = 0V, VDS = 1.0V, ...140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (C) Fig 3. Typical Transf...
Description	80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package High frequency DC-DC converters
File Size	503.95K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7401 IRF7402 IRF7401TR
OCR Text	... VDD = 10V --- ID = 4.1A ns --- RG = 6.0 --- RD = 2.4, See Fig. 10 D --- nH --- Between lead tip and center of die contact VGS = 0V ...140 160 A V G S , G ate-to -So urce Vo ltag e (V) T J , Junction T em perature (C ) Fig ...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
File Size	117.75K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7403 IRF7403TRPBF
OCR Text	... VDD = 15V --- ID = 4.0A ns --- RG = 6.0 --- RD = 3.7, See Fig. 10 D --- nH --- Between lead tip and center of die contact VGS = 0V ...140 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes...
Description	Generation V Technology Power MOSFET
File Size	112.84K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7404
OCR Text	...0V 32 --- ID = -3.2A ns 100 --- RG = 6.0 65 --- R D = 3.1, See Fig. 10 D 2.5 4.0 --- nH --- Between lead tip and center of die co...140 160 A -V G S , G a te-to -S o u rce V o lta g e (V ) T J , J unc tion T em perature (C ...
Description	HEXFET Power MOSFET
File Size	159.41K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	... VDD = 28V --- ID = 1.7A ns --- RG = 6.0 --- RD = 16, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain R...140 160 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) Fig 3...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Electron Devices NEC Corp.
Part No.	uPA1520B uPA1520BH
OCR Text	...RL VGS VGS Wave Form PG. RG RG = 10 0 ID 10 % VGS (on) 90 % VDD 90 % 90 % ID ID Wave Form VGS 0 t t = 1 s Duty Cy...140 160 VDS - Drain to Source Voltage - V TC - Case Temperature - C DRAIN CuRRENT vs. DRAIN TO...
Description	N-CHANNEL POWER MOS FET ARRAY SWITCHING uSE From old datasheet system TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
File Size	76.66K / 8 Page	View it Online	Download Datasheet

For rg-140 u Found Datasheets File :: 6360 Search Time::1.828ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |