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Atmel
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| Part No. |
AT49BV040A
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| OCR Text |
...inputs to avoid bus contention. reprogramming the at49bv040a is performed by erasing a block of data and then programming on a byte by byte basis. the byte programming time is a fast 30 s. the end of a program cycle can be optionally dete... |
| Description |
4M, 2.7-Volt Read and Write Flash, Bottom Boot
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| File Size |
136.79K /
17 Page |
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Atmel
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| Part No. |
AT49BV002A AT49BV002AN AT49V002ANT AT49V002AT AT49BV002ANT
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| OCR Text |
...inputs to avoid bus contention. reprogramming the at49bv002a(n)(t) is performed by erasing a block of data and then pro- gramming on a byte by byte basis. th e byte programming time is a fast 30 s. the end of a program cycle can be option... |
| Description |
AT49BV002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 2.7-Volt Read and 2.7-Vold Write. Top or Bottom Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash 256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Bottom Boot Parametric Block Flash
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| File Size |
155.37K /
19 Page |
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Atmel Corp.
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| Part No. |
AT49BV-LV001
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| OCR Text |
...puts to avoid bus con- tention. reprogramming the at49bv/lv001(n)(t) is per- formed by erasing a block of data and then programming on a byte-by-byte basis. the byte programming time is a fast 50 s. the end of a program cycle can be optiona... |
| Description |
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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| File Size |
137.55K /
21 Page |
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聚兴科技股份有限公司
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| Part No. |
AT49F002A-55JI
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| OCR Text |
reprogramming fast read access time ? 55 ns internal program control and timer sector architecture ? one 16k bytes boot block with programming lockout ? two 8k bytes parameter blocks ? four main memory blocks (one 32k bytes, three 64k... |
| Description |
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| File Size |
402.75K /
20 Page |
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Bourns, Inc. Atmel, Corp.
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| Part No. |
AT45DB081B-RC AT45DB081B-RI AT45DB081B-CC
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| OCR Text |
...allows receiving of data while reprogramming of nonvolatile memory continuous read capability through entire array internal program and control timer low power dissipation ? 4 ma active read current typical ? 2 a cmos standby current... |
| Description |
(438.85 k) 438.85十一 (438.85 k) 38.85十一
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| File Size |
243.65K /
31 Page |
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Atmel Corp. Atmel, Corp.
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| Part No. |
AT29C257-70 AT29C257-15JC AT29C257-12JC AT29C257-90JC AT29C257-70JC AT29C257-15JI AT29C257-12JI
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| OCR Text |
reprogramming page program operation single cycle reprogram (erase and program) internal address and data latches for 64-bytes internal program control and timer hardware and software data protection fast program cycle times page (64-by... |
| Description |
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125 256K 32K x 8 5-volt Only CMOS Flash Memory 256K 32K的8 5伏只有闪存的CMOS 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 32K X 8 FLASH 5V PROM, 120 ns, PQCC32
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| File Size |
564.25K /
12 Page |
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TE Connectivity, Ltd.
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| Part No. |
AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI
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| OCR Text |
...- lar to reading from an eprom. reprogramming the at49bv/lv2048b is performed by erasing a block of data (entire chip or main memory block) and then programming on a word by word basis. the typical word programming time is a fast 30 s. the ... |
| Description |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash EEPROM EEPROM
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| File Size |
144.85K /
13 Page |
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it Online |
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