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power-driven Datasheet PDF File

For power-driven Found Datasheets File :: 34681 Search Time::1.797ms
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				NEC Corp.
Part No.	2SJ243 D11215EJ1V0DS00
OCR Text	...eal for driving the actuator of power-saving systems, 1.6 0.1 PACKAGE DIMENSIONS (in mm) 0.3 0.05 0.1 +0.1 -0.05 Moreover, the 2SJ...driven by 3-V IC * Can be automatically mounted 0.5 1.0 1.6 0.1 0.6 0.75 0.05 EQUIVALENT ...
Description	From old datasheet system P-CHANNEL MOS FET FOR SWITCHING
File Size	58.34K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ247
OCR Text	power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220AB D G 1 2 ...
Description	Silicon P-Channel MOS FET
File Size	46.46K / 8 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ248
OCR Text	power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 23 ...
Description	Silicon P-Channel MOS FET
File Size	32.65K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Hitachi Semiconductor
Part No.	2SJ278
OCR Text	power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline UPAK 21 4 3 D G 1. Gat...
Description	Silicon P-Channel MOS FET
File Size	41.20K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ350
OCR Text	power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220FM D G 1 23 ...
Description	Silicon P-Channel MOS FET
File Size	46.11K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ353 2SJ353-T D11216EJ1V0DS00
OCR Text	...0 1.5 3.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 1.0 150 -55 to +150 W C C Document No. D11216EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 199...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
File Size	55.23K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text	...0 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 -55 to +150 W C C The internal diode connected between the gate and source of this product is to protect the product f...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
File Size	64.46K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text	...0 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.5 0.1 2.0 W C C 150 -55 to +150 The internal diode connected between the gate and source of this product is to protect t...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOSFET
File Size	65.63K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2
OCR Text	...kages for small signals and for power transistors, and compensates those disadvantages * Can be directly driven by an IC operating at 5 V. * Low on-resistance RDS(ON) = 0.35 MAX. @VGS = -4 V, ID = -1.5 A RDS(ON) = 0.20 MAX. @VGS = -10 V, ...
Description	P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
File Size	63.14K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491
OCR Text	...kages for small signals and for power transistors, and compensates those disadvantages * Can be directly driven by an IC operating at 5 V. * Low on-resistance RDS(ON) = 0.40 MAX. @VGS = -4 V, ID = -1.5 A RDS(ON) = 0.30 MAX. @VGS = -10 V, ...
Description	From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
File Size	93.97K / 6 Page	View it Online	Download Datasheet

For power-driven Found Datasheets File :: 34681 Search Time::1.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |