| |
|
 |
VISHAY SEMICONDUCTORS
|
| Part No. |
5KA17A-1
|
| OCR Text |
...v-0 ? exclusive patented par ? oxide passivated chip construction ? low incremental surge resistance ? ideally suited for automotive ?load...nitride passivated die terminals: axial leads, solderable per mil-std-750, method 2026 polarity: th... |
| Description |
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
| File Size |
92.36K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
VISHAY SEMICONDUCTORS
|
| Part No. |
5KA17A/100
|
| OCR Text |
...v-0 ? exclusive patented par ? oxide passivated chip construction ? low incremental surge resistance ? ideally suited for automotive ?load...nitride passivated die terminals: axial leads, solderable per mil-std-750, method 2026 polarity: th... |
| Description |
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
| File Size |
74.17K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ANAREN INC
|
| Part No. |
G150N50W4B
|
| OCR Text |
... itive alternative to beryllium oxide (beo). the termination is well suited to all cellular frequency bands such as; amps, gsm, dcs, pcs, phs and umts. the high power handling makes the part ideal for terminating circulator s, and for us... |
| Description |
0 MHz - 2700 MHz 50 ohm RF/MICROWAVE TERMINATION
|
| File Size |
122.81K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ANAREN INC
|
| Part No. |
D10AA20Z1
|
| OCR Text |
...um nitride (aln) and beryllium oxide (beo). the attenuator is well suited to all cellular frequency bands such as; amps, gsm, dcs, pcs, phs and umts. the high power handling makes the part ideal for inter-stage matching, directional cou... |
| Description |
0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
| File Size |
178.75K /
3 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|