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For netw Found Datasheets File :: 283    Search Time::1.703ms    
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    SI9934BDY06

Vishay Siliconix
Part No. SI9934BDY06
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description Dual P-Channel 2.5-V (G-S) MOSFET

File Size 205.54K  /  4 Page

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    SUM40N02-12P SUM40N02-12P06

Vishay Siliconix
Part No. SUM40N02-12P SUM40N02-12P06
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description N-Channel 20-V (D-S), 175Celsius MOSFET

File Size 197.83K  /  4 Page

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    ICST[Integrated Circuit Systems]
Part No. ICS8702BYT ICS8702 ICS8702BY
OCR Text ...vels the recommended input bias netw ork is a resistor to VDDI, a resistor of equal value to ground and a 0.1F capacitor from the input to ground. The resulting sw itch point is approximately VDD/2 300mV. ABSOLUTE MAXIMUM RATINGS Suppl...
Description LOW SKEW ±1, ±2 CLOCK GENERATOR

File Size 186.44K  /  12 Page

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    SUM27N20-78 SUM27N20-7806

Vishay Siliconix
Part No. SUM27N20-78 SUM27N20-7806
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description N-Channel 200-V (D-S), 175Celsius MOSFET

File Size 196.26K  /  4 Page

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    SI9433BDY05

Vishay Siliconix
Part No. SI9433BDY05
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description P-Channel 20-V (D-S) MOSFET

File Size 197.24K  /  4 Page

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    http://
Part No. SI4409DY
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description P-Channel 150-V (D-S) MOSFET

File Size 191.76K  /  4 Page

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    SI4462DY05

Vishay Siliconix
Part No. SI4462DY05
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description N-Channel 200-V (D-S) MOSFET

File Size 191.86K  /  4 Page

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    SI4464DY05

Vishay Siliconix
Part No. SI4464DY05
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description N-Channel 200-V (D-S) MOSFET

File Size 187.13K  /  4 Page

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    SI4465ADY

Vishay Siliconix
Part No. SI4465ADY
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description P-Channel 1.8-V (G-S) MOSFET

File Size 211.47K  /  4 Page

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    Vishay Intertechnology,Inc.
Part No. SI6866BDQ
OCR Text ...-to-drain feedback capac itance netw o rk is used to model the gate charge characteristics w h ile avoiding convergence difficulties of the sw itched c gd model. all model parameter values are optimized to provide a best fit to ...
Description Dual N-Channel 2.5-V (G-S) MOSFET

File Size 190.08K  /  3 Page

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