Part Number Hot Search : 
4530N BSP31 78054 0923171 SS113A MPSW42G ST1200 SCES106D
Product Description
Full Text Search
  naval Datasheet PDF File

For naval Found Datasheets File :: 202    Search Time::1.234ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL13A0R4 FSL13A0D FSL13A0D1 FSL13A0D3 FSL13A0R FSL13A0R1 FSL13A0R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
9A/ 100V/ 0.180 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 70.80K  /  8 Page

View it Online

Download Datasheet





    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R FSL214R1 FSL214R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

File Size 56.71K  /  8 Page

View it Online

Download Datasheet

    FSL230R3 FSL230 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R4

INTERSIL[Intersil Corporation]
Part No. FSL230R3 FSL230 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R4
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description    5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 44.98K  /  8 Page

View it Online

Download Datasheet

    HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL430R4 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26...
Description 2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 2 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

File Size 46.19K  /  8 Page

View it Online

Download Datasheet

    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL923A0R3 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 FSL923A0R4
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 57.07K  /  8 Page

View it Online

Download Datasheet

    Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
Part No. FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26...
Description 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

File Size 45.72K  /  8 Page

View it Online

Download Datasheet

    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A0R FSS913A0R1 FSS913A0R3 FSS913AOD
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

File Size 55.89K  /  8 Page

View it Online

Download Datasheet

    INTERSIL[Intersil Corporation]
Part No. FSS9230R4 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 FSS9230R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description    4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 44.55K  /  8 Page

View it Online

Download Datasheet

    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ9055R FSTJ9055R1 FSTJ9055R3
OCR Text ...ven National Labs; witnessed by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3...
Description Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

File Size 71.30K  /  8 Page

View it Online

Download Datasheet

    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 57.05K  /  8 Page

View it Online

Download Datasheet

For naval Found Datasheets File :: 202    Search Time::1.234ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of naval

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.18407702445984