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  min-10v Datasheet PDF File

For min-10v Found Datasheets File :: 93323    Search Time::4.375ms    
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    Cystech Electonics Corp...
Part No. MTN10N60BE3-0-UB-X
OCR Text ...s otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0v, i d =250 a ? bv dss / ? t...10v, i d =6a dynamic *qg - 43.4 - *qgs - 8.5 - *qgd - 18 - nc i d =10a, v dd =300v, ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 398.07K  /  10 Page

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    STS4C3F30L

STMicroelectronics
Part No. STS4C3F30L
OCR Text ...mbol parameter test condictions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 n-ch p-ch 30 30 v v i d...10v, i d = 2a v gs = 10v, i d = 1.5a v gs = 4.5v, i d = 2a v gs = 4.5v, i d = 1.5a n-ch p-ch ...
Description N-channel 30V - 0.044Ω - 5A - SO-8 STripFET Power MOSFET

File Size 365.14K  /  14 Page

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    Cystech Electonics Corp...
Part No. MTN10N65BE3-0-UB-X
OCR Text ...s otherwise specified) symbol min. typ. max. unit test conditions static bv dss 650 - - v v gs =0v, i d =250 a, tj=25 ? bv ...10v, i d =6a dynamic *qg - 54.2 - *qgs - 9.6 - *qgd - 22.2 - nc i d =10a, v dd =520v...
Description N-Channel Enhancement Mode Power MOSFET

File Size 465.37K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTN4N60BE3-0-UB-X
OCR Text ...s otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0v, i d =250 a, tj=25 ? bv ...10v, i d =2.4a dynamic *qg - 18.8 - *qgs - 3.0 - *qgd - 8.8 - nc i d =4a, v dd =300v...
Description N-Channel Enhancement Mode Power MOSFET

File Size 464.50K  /  10 Page

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    Cystech Electonics Corp...
Part No. MTN9N60BE3-0-UB-X
OCR Text ...s otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0v, i d =250 a, tj=25 ? bv ...10v, i d =4.5a dynamic *qg - 34.5 - *qgs - 5.4 - *qgd - 17.1 - nc i d =8.5a, v dd =3...
Description N-Channel Enhancement Mode Power MOSFET

File Size 397.88K  /  10 Page

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    IPS
Part No. FTA02N65B
OCR Text ...wise specified symbol parameter min. typ. max. units test conditions r ds(on) static drain-to-source on-resistance figure 9 and 10. -- 6.5 8.0 ? v gs =10v, i d =0.9a (note *4) v gs(th) gate threshold voltage, figure 12. 2.0 -- 4.0 v v ds ...
Description N-Channel MOSFET

File Size 273.10K  /  9 Page

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    Microsemi
Part No. APT8052BFLLG
OCR Text ...s(th) unit volts ohms ana volts min typ max 800 0.520 250 1000 100 35 apt8052bfll_sfll 800 1560 3040 298 2.38 -55 to 150 300 1530 1210 bfll ...10v v dd = 400v i d = 15a @ 25c resistive switching v gs = 15v v dd = 400v i d = 1...
Description FREDFETs

File Size 149.21K  /  5 Page

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    IXTP20N65X IXTA20N65X

IXYS Corporation
Part No. IXTP20N65X IXTA20N65X
OCR Text ...s otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 650 v v gs(th) v ds = v gs , i d ...10v, i d = 0.5 ? i d25 , note 1 210 m ? g = gate d = drain s = source ...
Description Preliminary Technical Information

File Size 233.79K  /  6 Page

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