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For mils Found Datasheets File :: 5812 Search Time::1.547ms
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				Central Semiconductor Corp Central Semiconductor C...
Part No.	CP317V PN3564 PN3563 2N918 2N5770
OCR Text	...planar die size 14.5 x 14.5 mils die thickness 7.1 mils base bonding pad area 2.4 x 2.2 mils emitter bonding pad area 2.4 x 2.2 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centrals...
Description	NPN - RF Transistor Chip NPN - RF Transistor Chip
File Size	444.16K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ACS541D ACS541HMSR ACS541K ACS541MS 5962F9671001VRC 5962F9671001VXC FN4085
OCR Text	...cteristics DIE DIMENSIONS: 102 mils x 102 mils 2,600mm x 2,600mm METALLIZATION: Type: AlSi Metal 1 Thickness: 7.125kA 1.125kA Metal 2 Thickness: 9kA 1kA GLASSIVATION: Type: SiO2 Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: <2.0 x 105 A/c...
Description	Buffer/Line Driver, Octal, Tri-State, Rad-Hard, Advanced Logic, CMOS Radiation Hardened Octal Buffer/ Line Driver Three-State From old datasheet system
File Size	232.09K / 3 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc.
Part No.	GAASPINDIODECHIPS
OCR Text	... anode a b c b dimension mils millimeters a 7 .5 .178 .013 b 11 1 .279 .025 c 2.2 .3 .056 .008 typical ttl driver circuit ...
Description	May be Driven Directly by TTL Signals
File Size	334.77K / 6 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CP328X
OCR Text	...etails die size 15.7 x 15.7 mils die thickness 5.5 mils gate bonding pad area 3.9 x 3.9 mils source bonding pad area 9.1 x 8.1 mils top side metalization al-si 30,000? back side metalization au - 9,000? www.centralse...
Description	N-Channel Enhancement-Mode MOSFET Chip
File Size	690.02K / 2 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC51809
OCR Text	...die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spread...
Description	GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz
File Size	257.20K / 6 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120D
OCR Text	... note: the data included 0.7 mils diameter au bonding wires: 1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.
Description	High Efficiency Heterojunction Power FET
File Size	41.53K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EPA120A
OCR Text	... note: the data included 0.7 mils diameter au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 8 source wires, 7 mils each; no source wires fo r epa120av. p-1db & pae vs. vds 20 25 30 ...
Description	High Efficiency Heterojunction Power FET
File Size	51.39K / 2 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CPZ36R
OCR Text	...details die size 10.2 x 10.2 mils die thickness 3.9 mils cathode bonding pad area 7.1 mils diameter top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (5-january 2012) process ...
Description	5.0 Volt TVS Chip
File Size	600.92K / 2 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CP704V
OCR Text	...ial planar die size 22 x 22 mils die thickness 7.1 mils base bonding pad area 3.7 x 3.7 mils emitter bonding pad area 4.2 x 4.2 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centrals...
Description	Small Signal Transistors PNP - High Voltage Transistor Chip
File Size	469.05K / 2 Page	View it Online	Download Datasheet

For mils Found Datasheets File :: 5812 Search Time::1.547ms
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