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Intersil, Corp. Ricoh Co., Ltd.
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| Part No. |
FSGYE234R3 FSGYE234D1
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| OCR Text |
...- see immunity for let of 82mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 5v off-bias dose rate - typically survives...200 na drain to source on-state voltage v ds(on) v gs = 12v, i d = 9a - - 2.07 v drain to source o... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 9A I(D) | SMT 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 9A条(丁)|贴片
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| File Size |
113.56K /
7 Page |
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