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max.3.5w ch Datasheet PDF File

For max.3.5w ch Found Datasheets File :: 452 Search Time::2.391ms
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				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA07M4047M_06 RA07M4047M RA07M4047M-101 RA07M4047M06
OCR Text	...50mW MIN 400 7 40 TYP MAX 470 UNIT MHz W % Harmonic -25 4:1 1 dBc -- mA -- -- Input VSWR Gate Current Stability L...3 2 1 in @Pout=6.5W VDD=7.2V Pin=50mW Pout @VGG=3.5V 2nd, 3rd HARMONICS versus FREQUENCY 100 ...
Description	RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
File Size	100.17K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MUS2B RD07MUS2B11
OCR Text	...ol parameter conditions min typ max. i dss drain cutoff current v ds =17v, v gs =0v - - 10 ua i gss gate cutoff current v gs =5v, v ds =0v -...3 typical characteristics ( these are only typical curves and devices are not necessarily guaranteed...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
File Size	843.35K / 18 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] TE Connectivity, Ltd.
Part No.	JWT75 JWT75-522 JWT75-525 JWT75-5FF JWT100-522 JWT100-525 JWT100-5FF
OCR Text	... control Nominal output voltage Max. output power Series name Blank: Standard open frame & terminal block A: With Cover & terminal block B: ...3-2) Universal Input (85 ~ 265VAC) EMI (Built to meet EN55011-B,EN55022-B,VCCI-B,FCC-B) Remote ON/OF...
Description	Triple output 75 ~ 100W Triple output 75 ~ 100W 三路输出75100
File Size	421.75K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0918A MGF0918A11
OCR Text	... limits unit min. typ. max. i dss saturated drain current v ds =3v,v gs =0v - 300 400 ma v gs(off) gate to source cu...3 -20 -15 -10 -5 0 5 10 15 20 25 30 -20 -15 -10 -5 0 5 10 15 pin(scl)(dbm) po(scl)(dbm) -70 -60 -50 ...
Description	High-power GaAs FET (small signal gain stage)
File Size	103.73K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFK35V4045 MGFK35V404511
OCR Text	... limits unit min. typ. max. idss saturated drain current vds=3v,vgs=0v 2000 2700 3500 ma gm transconductance vds=3...3.5w publication date : apr., 2011 2 mgfk35v4045 typical characteristics ...
Description	X/Ku band internally matched power GaAs FET
File Size	136.73K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0952P11
OCR Text	... limits unit min. typ. max. v gs(off) gate to source cut-off voltage v ds =3v,i d =12.6ma -1 -3 -5 v po 1 output power 35.0 36.5 - dbm ? add 1 power added efficiency - 50 - % g lp *2 linear power ...
Description	High-power GaAs FET (small signal gain stage)
File Size	294.20K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFK37V4045 MGFK37V404511
OCR Text	... limits unit min. typ. max. idss saturated drain current vds=3v,vgs=0v 3600 5200 6600 ma gm transconductance vds=3...3.5 ? c/w *2 : channel-case keep safety first in your circuit designs! mitsubishi electric corp...
Description	X/Ku band internally matched power GaAs FET
File Size	135.53K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0915A MGF0915A11
OCR Text	... limits unit min. typ. max. i dss saturated drain current v ds =3v,v gs =0v - 2400 3000 ma v gs(off) gate to source cut-off voltage v ds =3v,i d =10ma -1 -3 -5 v gm transconductance v ds =3v,i d =800ma - 1000 ...
Description	High-power GaAs FET (small signal gain stage)
File Size	107.57K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MUS2B RD07MUS2B10
OCR Text	...ol parameter conditions min typ max. i dss drain cutoff current v ds =17v, v gs =0v - - 10 ua i gss gate cutoff current v gs =5v, v ds =0v -...3 4 5 6 7 0 2 4 6 8 10 v ds (v) i d s ( a ) ta=+25c 3v 3.5v 2v 2.5v v gs =1.5v v gs -i ds character...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W
File Size	872.90K / 17 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0906B MGF0906B11
OCR Text	... limits unit min. typ. max. idss saturated drain current vds=3v,vgs=0v - 2 3 a gm transconductance vds=3v,id=1.1a - 1 - s vgs(off) gate to source cut-off voltage vds=3v,id=10ma -1 -2.5 -4 v p1db ...
Description	High-power GaAs FET (small signal gain stage)
File Size	175.03K / 4 Page	View it Online	Download Datasheet

For max.3.5w ch Found Datasheets File :: 452 Search Time::2.391ms
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