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International Rectifier, Corp.
IRF[International Rectifier]
http://
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| Part No. |
IRIS4011K IRIS4011 2189 IRISMPS2
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| OCR Text |
...r conditions.
Symbol
IDpeak idmax EAS VCC VTH P D1 P D2 RthJC TJ TS Tf TOP TL
Definition
Peak drain current Maximum switching current Single pulse avalanche energy Power supply voltage OCP/FB terminal voltage Power dissipation for M... |
| Description |
INTEGRATED SWITCHER 多功能开
AC-DC flyback power supply, IRIS4011(K), universal input, 12VOUT, 2A IOUT
60W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
60W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
From old datasheet system
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| File Size |
61.29K /
6 Page |
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http://
IRF[International Rectifier]
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| Part No. |
IRISA6131 IRIS-A6131
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| OCR Text |
...ir conditions.
Symbol IDpeak idmax
Definition Drain Current *1 Maximum switching current
Terminals Max. Ratings 8-3 3.2 8-3 3.2
Units A A
EAS VOCP VCC VFB/OLP Vstartup PD1 PD2 TF Top Tstg Tch
Single pulse avalanche energy ... |
| Description |
INTEGRATED SWITCHER
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| File Size |
393.82K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLR3715ZPBF
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| OCR Text |
...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF... |
| Description |
HEXFET Power MOSFET
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| File Size |
318.66K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRLU3715ZCPBF IRLR3715ZCPBF
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| OCR Text |
...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF... |
| Description |
HEXFET Power MOSFET
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| File Size |
292.07K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
IRLU3717PBF IRLR3717PBF
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| OCR Text |
...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF... |
| Description |
HEXFET Power MOSFET
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| File Size |
260.49K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLU7807ZCPBF IRLR7807ZCPBF
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| OCR Text |
...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF... |
| Description |
HEXFET Power MOSFET
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| File Size |
293.00K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLU8113PBF IRLR8113PBF
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| OCR Text |
...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF... |
| Description |
HEXFET Power MOSFET
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| File Size |
256.93K /
11 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA01503D_1
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| OCR Text |
...Gn P1dB IRL ORL NF IDD IGG ITOI idmax PRF 13 13 Minimum 8.5 17 19 20 18 20 2.7 190 4 8 60+IDD 10 3.5 240 10 Typical Maximum 12.0 23 Units GHz dB dBm dB dB dB mA mA dBm mA W
1. TB = MMIC Base Temperature
RS-O-P-DS-3003 - -
2/7
X-... |
| Description |
X-Band Limiter/Low Noise Amplifier 8.5 -12.0 GHz
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| File Size |
344.64K /
7 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQTRX
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| OCR Text |
...5 S21
EFET 300 um Vds=3V 50% idmax
-6 -4 -2 0 2 4 6
S11 S22
Freq (0.1GHz to 26.1GHz)
S12 / .05 S21
TriQuint Semiconductor 2300 NE Brookwood Pkwy Hillsboro, Oregon 97124
Semiconductors for Communications www.triquint.com
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| Description |
Advanced Passives & MESFET Foundry Service
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| File Size |
172.25K /
6 Page |
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it Online |
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Price and Availability
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