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NXP Semiconductors N.V.
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| Part No. |
BT151-500C
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| OCR Text |
...onditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 2 15 ma i l latching current v d = 12 v; i gt = 0.1 a ...2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min april 2004 5 rev 1.000
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| Description |
SCR BT151-500C<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
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| File Size |
118.59K /
8 Page |
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NXP Semiconductors N.V.
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| Part No. |
BT138-800G
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| OCR Text |
...ax. unit bt138- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 10 ...2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min june 2001 5 rev 1.400
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| Description |
4Q Triac
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| File Size |
135.47K /
8 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BT258-600R
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| OCR Text |
...onditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 50 200 a i l latching current v d = 12 v; i gt = 0.1 a...2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min october 2002 5 rev 2.00... |
| Description |
Logic level thyristor 逻辑电平可控
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| File Size |
135.61K /
8 Page |
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it Online |
Download Datasheet |
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Fagor
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| Part No. |
FT0604XH
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| OCR Text |
...j =125? t j =125? i g = 2x i gt , t r 100ns f= 120 hz, t j =125? 6 63 60 31 50 -40 -40 a a a a 2 s a w a/? ? ? 4 1 +125 +150 di/dt i tsm repetitive peak off state voltage parameter voltage unit symbol v drm v rrm b 200 v m 600 d 400... |
| Description |
(FT06xxxH) High Commutation TRIACs
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| File Size |
173.53K /
4 Page |
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it Online |
Download Datasheet |
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