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  gpp Datasheet PDF File

For gpp Found Datasheets File :: 201    Search Time::1.328ms    
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    TFMBJ65A TFMBJ65 TFMBJ90A TFMBJ TFMBJ10 TFMBJ100 TFMBJ100A TFMBJ10A TFMBJ11 TFMBJ110 TFMBJ110A TFMBJ11A TFMBJ12 TFMBJ120

RECTRON[Rectron Semiconductor]
Part No. TFMBJ65A TFMBJ65 TFMBJ90A TFMBJ TFMBJ10 TFMBJ100 TFMBJ100A TFMBJ10A TFMBJ11 TFMBJ110 TFMBJ110A TFMBJ11A TFMBJ12 TFMBJ120 TFMBJ120A TFMBJ12A TFMBJ13 TFMBJ130 TFMBJ130A TFMBJ13A TFMBJ14 TFMBJ14A TFMBJ15 TFMBJ150 TFMBJ150A TFMBJ15A TFMBJ16 TFMBJ160 TFMBJ160A TFMBJ16A TFMBJ17 TFMBJ170 TFMBJ170A TFMBJ17A TFMBJ18 TFMBJ18A TFMBJ20 TFMBJ20A TFMBJ22 TFMBJ22A TFMBJ24 TFMBJ24A TFMBJ26 TFMBJ26A TFMBJ28 TFMBJ28A TFMBJ30 TFMBJ30A TFMBJ33 TFMBJ33A TFMBJ36 TFMBJ36A TFMBJ40 TFMBJ40A TFMBJ43 TFMBJ43A TFMBJ45 TFMBJ45A TFMBJ48 TFMBJ48A TFMBJ50 TFMBJ50A TFMBJ51 TFMBJ51A TFMBJ54 TFMBJ54A TFMBJ58 TFMBJ58A TFMBJ60 TFMBJ60A TFMBJ64 TFMBJ64A TFMBJ70 TFMBJ70A TFMBJ75 TFMBJ75A TFMBJ78 TFMBJ78A TFMBJ80 TFMBJ80A TFMBJ85 TFMBJ85A TFMBJ90
OCR Text gpp TRANSIENT VOLTAGE SUPPRESSOR 600 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 600 watt surage capability at 1ms Excellent clamping capabilit...
Description gpp TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

File Size 1,012.67K  /  4 Page

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    FLL21E180IU

Eudyna Devices Inc
Part No. FLL21E180IU
OCR Text ...o=2.1325, f1=2.1475GHz W-CDMA 3-gpp BS-1 64ch Modulation -25 -30 -35 IMD [dBc] -40 -45 -50 -55 -60 28 30 32 34 36 38 40 42 44 46 48 Output Power [dBm] IM3 IM5 Drain Efficiency 35 30 Drain Efficiency [%] Single-Carrier ACLR , Drain Effic...
Description High Voltage - High Power GaAs FET

File Size 152.05K  /  6 Page

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    GP50PF-1A

Diodes Incorporated
Part No. GP50PF-1A
OCR Text gpp die) tel.: (310) 767-1052 fax: (310) 767-7958 diotec electronics corp gardena, ca 90248 u.s.a 18020 hobart blvd., unit b mechanical data case: nickel plated copper finish: all external surfaces are corrosion resistant and the contact ...
Description 50 AMP PRESS FIT HIGH VOLTAGE DIODES (gpp DIE)

File Size 61.06K  /  1 Page

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    RC15S06G RC15S08G RC15S04G RC15S02G RC15S10G RC15S01G

Shanghai Sunrise Electr...
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
Part No. RC15S06G RC15S08G RC15S04G RC15S02G RC15S10G RC15S01G
OCR Text gpp CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 15A FEATURES * Glass passivated junction chip * High surge capability * Solderable electrode surfaces * Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA * Polarity: Bottom...
Description SILICON gpp CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 15A

File Size 12.52K  /  1 Page

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    Shenzhen Luguang Electronic Technology Co., Ltd
Part No. GF1JS
OCR Text gpp surface mount rectifier features ? for surface mounted applications  low profile package  ideal for automated placement  high temperature soldering : 260c /10 seconds at terminals  glass passivated chip junction  in compliance ...
Description gpp SURFACE MOUNT RECTIFIER

File Size 88.07K  /  2 Page

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    Sumitomo Electric Industries, Ltd.
Part No. FLL21E040IK
OCR Text ...o=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr & drain efficiency vs. output power @v ds =28v i ds =500ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation fll21e040ik high voltage - high power gaas fet 34 35 36 37...
Description High Voltage - High Power GaAs FET 高电高功率GaAs场效应管

File Size 360.08K  /  6 Page

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    Sumitomo Electric Industries, Ltd.
Part No. FLL21E010MK
OCR Text ...2.1325ghz f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr & drain efficiency vs. output power @v ds =28v i ds =125ma f=2.1325ghz w-cdma 3gpp bs-1 64ch modulation 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 10 12 14...
Description High Voltage - High Power GaAs FET 高电高功率GaAs场效应管

File Size 297.20K  /  6 Page

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    Sumitomo Electric Industries, Ltd.
Part No. FLL21E090IK
OCR Text ...o=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr & drain efficiency vs. output power @v ds =28v i ds =700ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation 31 33 35 37 39 41 43 45 47 49 51 2 2.05 2.1 2.15 2.2 2.25 ...
Description High Voltage - High Power GaAs FET 高电高功率GaAs场效应管

File Size 326.48K  /  6 Page

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    Sumitomo Electric Industries, Ltd.
Part No. FLL21E090IY
OCR Text ...o=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v i ds =750ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation 30 32 34 36 38 40 42 44 46 48 50 52 2.08 2.1 2.12 2.14 2.16 2.18 2.2 frequency...
Description L,S-band High Power GaAs FET 升,S波段高功率GaAs场效应管

File Size 286.41K  /  7 Page

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    Sumitomo Electric Industries, Ltd.
Part No. FLL21E135IX
OCR Text ...o=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v, i ds =1000ma, fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation -60 -55 -50 -45 -40 -35 -30 -25 26 28 30 32 34 36 38 40 42 44 46 48 output ...
Description L,S-band High Power GaAs FET 升,S波段高功率GaAs场效应管

File Size 287.42K  /  7 Page

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For gpp Found Datasheets File :: 201    Search Time::1.328ms    
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