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MOTOROLA[Motorola, Inc]
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| Part No. |
MRf18060A MRf18060ALSR3 MRf18060AR3 MRf18060ASR3
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| OCR Text |
...R3 1.8 to 2.0 GHz. Suitable for <font color='#ff0000'>fmfont>, TDMA, CDMA and multicarrier amplifier
The Rf MOSfET Line
applications. To be used in Class AB for PCN-...f = 1805 - 1880 MHz) Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) I... |
| Description |
MRf18060A, MRf18060AR3, MRf18060ALSR3, MRf18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel Rf Power MOSfETs Rf POWER fIELD EffECT TRANSISTORS
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| File Size |
399.98K /
8 Page |
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it Online |
Download Datasheet
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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| Part No. |
MRf18060B MRf18060BLSR3 MRf18060BR3 MRf18060BSR3
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| OCR Text |
...om 1.8 to 2.0 GHz. Suitable for <font color='#ff0000'>fmfont>, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio ...f = 1930 - 1990 MHz) Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) I... |
| Description |
HALL EfffECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes Rf Power field Effect Transistors
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| File Size |
486.59K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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