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fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 240 Search Time::2.719ms
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				Renesas Electronics Corporation
Part No.	TBB1008
OCR Text	...on are applicable for VHF unit (FET2) (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source b...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	215.08K / 14 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPA2353 UPA2353T1G-E4-A
OCR Text	... the Drains of the FET1 and the FET2 are internally connected. 1.8 V drive available and low on-state resistance RSS(on)1 = 31 m MAX. (VGS =...10 V, IS = 1.0 mA, TEST CIRCUIT 3 VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4 VGS = 4.5 V, IS = 3.0 A, TE...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	369.25K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPA2350T1P UPA2350T1P-E4-A
OCR Text	... EQUIVALENT CIRCUIT FET1 Gate1 FET2 Gate2 Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Source to Source Voltage (VGS = 0 V...10 V, IS = 1.0 mA, TEST CIRCUIT 3 VSS = 10 V, IS = 3.0 A, TEST CIRCUIT 4 VGS = 4.5 V, IS = 3.0 A, TE...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	391.37K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1012 TBB1012MMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	144.81K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK9MPP-55PRR
OCR Text	...tatic characteristics, FET1 and FET2 ID/Isense 5130 55 5700 - 6270 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description	Dual TrenchPLUS logic level FET 9160 mA, 55 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-013AC
File Size	243.57K / 15 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1017 TBB1017SMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	232.38K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK9MGP-55PTS
OCR Text	...voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current - 21.3 25 m ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description	Dual TrenchPLUS logic level FET
File Size	344.95K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK9MJJ-55PTT
OCR Text	...tatic characteristics, FET1 and FET2 ID/Isense 5850 55 6500 - 7150 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description	Dual TrenchPLUS logic level FET
File Size	253.22K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BUK9MLL-55PLL
OCR Text	...tatic characteristics, FET1 and FET2 ID/Isense 2430 55 2700 - 2970 - A/A V V(BR)DSS drain-source breakdown voltage NXP ...10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S...
Description	Dual TrenchPLUS logic level FET
File Size	253.26K / 16 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1016 TBB1016RMTL-E
OCR Text	...ion are applicable for FET1 and FET2 unit (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to sour...10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	97.07K / 10 Page	View it Online	Download Datasheet

For fet2-10 Found Datasheets File :: 240 Search Time::2.719ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |