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IRF[International Rectifier]
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| Part No. |
IRFM260
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| OCR Text |
...RES PO NSE)
N otes : 1 . D uty fac tor D = t PD M
0.01
t
1 t2
1
/t
2
0.001 0.00001
2. P eak TJ = P D M x Z th J C + T C
A
10
0.0001
0.001
0.01
0.1
1
t 1 , Re ctang ular P ulse D uration (sec )
... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
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| File Size |
284.37K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGBC20SD2
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| OCR Text |
...E SPO NS E)
N otes : 1 . D uty fac tor D = t 1 /t 2 PD M
t
1 t2
0.02 0.01
0.01 0.0000 1
2 . P ea k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.0 1
0.1
1
10
t 1 , R e ct an gu la r P ulse D ura tion (s ec )... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A)
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| File Size |
435.68K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL540N
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| OCR Text |
...RMAL RESPONSE) N ote s: 1. Duty fac tor D = t / t 2 1 2. Pe ak TJ = P DM x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 1 t 2
0.01 0.00001
A
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, ... |
| Description |
HEXFET Power MOSFET
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| File Size |
240.97K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRLZ34NS IRLZ34NL
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| OCR Text |
...
1 t2
N o te s : 1 . D u ty fac to r D = t
1
/ t2
0.01 0.00001
2 . P e a k T J = P D M x Z th J C + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transie... |
| Description |
HEXFET Power MOSFET
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| File Size |
265.72K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
MBR6045WTPBF
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| OCR Text |
...
0.1
t1 Notes: t2 1. Duty fac tor D = t 1/ t 2 2. Peak T = P x Z thJC+ TC J DM 0.1 1 10 100
0.01 0.00001
0.0001
0.001
0.01
t 1 , Rectangular Pulse Duration (S econds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteris... |
| Description |
SCHOTTKY RECTIFIER
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| File Size |
199.23K /
6 Page |
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it Online |
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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
STP80N05-09
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| OCR Text |
...ipation at Tc = 25 o C Derating fac tor dV/dt(1) Peak Diode Recov ery vo ltage slo pe Tstg Tj Storage Temperature Max. Operating Junction Temperature
o o
Value 50 50 20 80 60 320 150 1 5 -65 to 175 175
(1) ISD 60 A, di/dt 200 A/ms, ... |
| Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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| File Size |
113.50K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
STPS40L15CTPBF STPS40L15CT
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| OCR Text |
... Notes:
t
1 t2
1. Duty fac tor D = t 1/ t 2 2. Peak T = PDM x Z thJC+ TC J 0.1 1 10 100
0.01 0.00001
0.0001
0.001
0.01
t 1 , Rectangular Pulse Duration (S onds) ec
Fig. 4 - Maximum Thermal Impedance ZthJC Characte... |
| Description |
SCHOTTKY RECTIFIER
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| File Size |
183.91K /
6 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
SVC221
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| OCR Text |
...al Capacitance, C -- pF
3
fac Quality
tor Q (
f=100M
Hz)
3
2
2
Intert
ermin
al cap
acitan
ce C (
f=1M
Hz)
10 0 1 2 3 4 5 6 7 8 9 10 IT02027
100
Reverse Voltage, VR -- V
C -- Ta
1.04
... |
| Description |
Varactor Diode for FM Receiver Electronic Tuning Use
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| File Size |
20.31K /
3 Page |
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it Online |
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SSDI[Solid States Devices, Inc]
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| Part No. |
SVR1118-5 SVR1118 SVR1118-2.5 SVR1118-2.85
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| OCR Text |
...Price, and Availability Contact fac- 5/ All Operating Conditions include the combined effects of Load tory. Current, Input Voltage, and Temperature over each parameter's full range. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines an... |
| Description |
800 mAmps /2.5 thru 5Volts FIXED LOW DROPOUT LINEAR VOLTAGE REGULATOR
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| File Size |
58.88K /
2 Page |
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it Online |
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Price and Availability
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