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For double-protect Found Datasheets File :: 2617    Search Time::1.703ms    
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    DS1395 DS1395S DS1397

MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
Part No. DS1395 DS1395S DS1397
OCR Text ...ays accessible because they are double buffered. Once per second the ten bytes are advanced by one second and checked for an alarm condition. If a read of the time and calendar data occurs during an update, a problem exists where seconds, m...
Description RAMified Real Time Clock

File Size 193.99K  /  19 Page

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    DS1497 DS1495S DS1495

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1497 DS1495S DS1495
OCR Text ...ays accessible because they are double buffered. Once per second the ten bytes are advanced by one second and checked for an alarm condition. If a read of the time and calendar data occurs during an update, a problem exists where seconds...
Description RAMified Real Time Clock

File Size 194.13K  /  19 Page

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    M28256 M28256-12BS1T M28256-12BS6T M28256-12KA1T M28256-12KA6T M28256-12MS1T M28256-12MS6T M28256-12NS1T M28256-12NS6T M

STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. M28256 M28256-12BS1T M28256-12BS6T M28256-12KA1T M28256-12KA6T M28256-12MS1T M28256-12MS6T M28256-12NS1T M28256-12NS6T M28256-12WBS1T M28256-12WBS6T M28256-12WKA1T M28256-12WKA6T M28256-12WMS1T M28256-12WMS6T M28256-12WNS1T M28256-12WNS6T M28256-15BS1T M28256-15BS6T M28256-15KA1T M28256-15KA6T M28256-15MS1T M28256-15MS6T M28256-15NS1T M28256-15NS6T M28256-15WBS1T M28256-15WBS6T M28256-15WKA1T M28256-15WKA6T M28256-15WMS1T M28256-15WMS6T M28256-15WNS1T M28256-15WNS6T M28256-20BS1T M28256-20BS6T M28256-20KA1T M28256-20KA6T M28256-20MS1T M28256-20MS6T M28256-20NS1T M28256-20NS6T M28256-20WBS1T M28256-20WBS6T M28256-20WKA1T M28256-20WKA6T M28256-20WMS1T M28256-20WMS6T M28256-20WNS1T M28256-20WNS6T M28256-25BS1T M28256-25BS6T M28256-25KA1T M28256-25KA6T M28256-25MS1T M28256-25MS6T M28256-25NS1T M28256-25NS6T M28256-25WBS1T M28256-25WBS6T M28256-25WKA1T M28256-25WKA6T M28256-25WMS1T M28256-25WMS6T M28256-25WNS1T M28256-25WNS6T M28256-90BS1T M28256-90BS6T M28256-90KA1T M28256-90KA6T M28256-90MS1T M28256-90MS6T M28256-90NS1T M28256-90NS6T M28256-90WBS1T M28256-90WBS6T M28256-90WKA1T M28256-90WKA6T M28256-90WMS1T M28256-90WMS6T M28256-90WNS1T M28256-90WNS6T 4727 M28C256 M28C256-25WNS6T M28C
OCR Text ...TATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY: - Endurance >100,000 Erase/Write Cycles - Data Retention >10 Years JEDE...Protect Mode" of operation where no further write commands have any effect on the memory contents. T...
Description From old datasheet system
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection
256K (32K X8) PARALLEL EEPROM WITH SOFTWARE DATA PROTECTION
1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection

File Size 130.65K  /  21 Page

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    UPC1678 UPC1678G UPC1678GV UPC1678G-E2 UPC1678G-E1

NEC[NEC]
Part No. UPC1678 UPC1678G UPC1678GV UPC1678G-E2 UPC1678G-E1
OCR Text ...= +25 C, pin 5 and 8 Mounted on double copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85 C) Rating 6 360 -45 to +85 -55 to +150 TA = +25 C +10 Unit V mW Operating Ambient Temperature Storage Temperature Input Power TA Tstg Pin ...
Description 5 V-BIAS/ 7.5 dBm OUTPUT/ 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS 7.5 dBm OUTPUT 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

File Size 92.15K  /  16 Page

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    UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2
OCR Text ... 5, pin 8 TA = +25 C Mounted on double copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85 C) Rating 6 +10 360 -45 to +85 -55 to +150 Unit V dBm mW Operating Ambient Temperature Storage Temperature TA Tstg C C RECOMMENDED OPE...
Description 5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER 5伏偏置,5.5 dBm的输出,1.8 GHz的宽频带泗MMIC放大

File Size 71.65K  /  12 Page

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    UPC2756TB UPC2756TB-E3

NEC[NEC]
Part No. UPC2756TB UPC2756TB-E3
OCR Text ...V : VCC = 2.7 to 3.3 V : Due to double balanced mixer : Single-end push-pull IF amplifier * Equable temperature-drift oscillator : Differential amplifier type oscillator APPLICATIONS * Data carrier up to 2.0 GHz MAX. * Wireless LAN u...
Description MIXEROSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER

File Size 144.83K  /  16 Page

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    UPC2757TB UPC2757TB-E3 UPC2758TB UPC2758TB-E3

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. UPC2757TB UPC2757TB-E3 UPC2758TB UPC2758TB-E3
OCR Text ...B : VCC = 2.7 to 3.3 V : Due to double balanced mixer : Single-end push-pull IF amplifier APPLICATIONS * Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): PC2758TB * Cellular/cordless telephone u...
Description SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE 硅单片第一频率向下蜂窝转炉/无绳电话

File Size 120.32K  /  16 Page

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    UPC3210TB UPC3210TB-E3

NEC[NEC]
Part No. UPC3210TB UPC3210TB-E3
OCR Text ...A = +25 C TA = +25 C Mounted on double sided copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85 C) Conditions Ratings 6.0 30 200 Unit V mA mW Operating Ambient Temperature Storage Temperature Input Power Level TA Tstg Pin TA = +25...
Description 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

File Size 85.60K  /  16 Page

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    BR24L02 BR24L02FJ-W BR24L02FVM-W BR24L02FV-W BR24L02F-W BR24L02-W

ROHM[Rohm]
Part No. BR24L02 BR24L02FJ-W BR24L02FVM-W BR24L02FV-W BR24L02F-W BR24L02-W
OCR Text ...9) High reliability EEPROM with Double-Cell structure 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / w...protect input 1 WP 1 An open drain output requires a pull-up resistor. 4/25 Memory ICs ...
Description 256x8 bit electrically erasable PROM

File Size 386.75K  /  26 Page

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    BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR24L04-W

ROHM[Rohm]
Part No. BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR24L04-W
OCR Text ...9) High reliability EEPROM with Double-Cell structure 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / w...protect input 1 WP 1 An open drain output requires a pull-up resistor. 4/25 Memory ICs ...
Description 512】8 bit electrically erasable PROM
5128 bit electrically erasable PROM

File Size 385.18K  /  25 Page

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For double-protect Found Datasheets File :: 2617    Search Time::1.703ms    
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