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STMicro ST Microelectronics
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| Part No. |
M93S56 M93S46 M93S66 5124 M93S56-W
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| Description |
4KBIT, 2KBIT AND 1kbit (X16) SERIAL MICROWIRE BUS EEPROM WITH BLOCK PROTECTION 4K/2K/1K (x16) Serial Microwire Bus EEPROM with Block Protection From old datasheet system 4K-2K-1K (X16) SERIAL MICROWIRE BUS EEPROM WITH BLOCK PROTECTION
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| File Size |
161.31K /
23 Page |
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Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
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| Part No. |
BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25C33Y14I-1.8 CAT25C09S-1.8 SST29VE020-200-4C-EH CAT25C09Y14I-1.8 CAT25C09YI-1.8 BR24C16-DW6TP CAT25C02R-1.8 CAT24WC04L-1.8 SST29LE010-150-4C-WH CAT25C64S-1.8 CAT25C04S-1.8 SST29LE010-150-4C-WHE CAT24WC04U-1.8 SST29LE010-150-4I-EH BR93L66F-WE2 CAT93C86V-1.8 SST29LE010-150-4C-EH SST29EE010-70-4I-WH SST29EE512-70-4C-PH CAT25C33U14-1.8 CAT24WC08WI-1.8 CAT25C03U CAT25C65Y20 CAT25320VI-G CAT25320YI-G CAT24WC129XI BR95010-WMN6TP BR25L320FJ-WE2 BR93L46RFV-WE2 CAT93C56YI-1.8 CAT24C08WI-G CAT25C02Z-1.8 CAT24C01BJI CAT28C64BH13I-90 CAT25C64U14I CAT28C257GI-15 CAT28C257GA-12 CAT24WC01P CAT34WC02JI-1.8 CAT34RC02YI CAT25C03Z-1.8 CAT28C257LI-12 CAT28C512H-15T CAT28LV256LI-25 CAT28C512HI-15 CAT25020V-1.8 CAT24FC256WI-1.8
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| Description |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1kbit EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
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| File Size |
232.70K /
10 Page |
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ECS, Inc. Microchip Technology, Inc. TE Connectivity, Ltd. DB Lectro, Inc. Electronic Theatre Controls, Inc. Samtec, Inc. TriQuint Semiconductor, Inc. Infineon Technologies AG Allegro MicroSystems, Inc. Rochester Electronics, LLC
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| Part No. |
C30616BQC-07-SC C30616EQC-07-SC C30617BST-07-SC C30616BSC-07-SC C30617EFC-07-SC C30618BQC-07-SC C30616BST-07-SC C30617BQC-07-SC C30616BFC-07-SC C30616EFC-07-SC C30616ESC-07-SC C30616EST-07-SC C30617BSC-07-SC C30617ESC-07-SC C30617EST-07-SC C30618BSC-07-SC C30617BFC-07-SC C30617EQC-07-SC C30618BFC-07-SC C30616EFC-04-ST C30617BQC-04-ST C30617EQC-04-ST C30616ESC-04-ST C30616EST-04-ST C30617BSC-04-ST C30616EQC-04-ST C30616BQC-04-ST C30616BST-04-ST C30617ESC-04-ST C30617BST-04-ST C30616BSC-04-ST C30617BFC-04-ST C30616BFC-04-ST C30617EFC-04-ST C30617EST-04-ST C30616BSC-04-FC C30616EFC-04-FC C30616ESC-04-FC C30616BQC-04-FC C30616BSC-04-SC C30616EST-04-SC C30617BSC-04-SC C30617BST-04-SC C30617EFC-04-SC C30616EQC-04-FC C30617BQC-04-SC C30616BST-04-SC C30616EFC-04-SC C30616EQC-04-SC C30616BFC-04-FC C30617BFC-04-SC C30616BQC-04-SC C30616BST-04-FC C30616BFC-04-SC C30616ESC-04-SC C30617BST-04-FC C30616EST-04-FC C30618EST-04-ST C30618BFC-04-ST C30618ECER-04-ST C30618EFC-04-ST C30618BCER-04-ST C30618BQC-07-FC C30618BST-04-ST C30618ESC-04-ST C30618BST-07-FC C30618BSC-07-FC C30618BCER-07-FC C30618BQC-04-ST C30618BSC-04-ST C30617EST-04-SC C30618EST-04-SC C30637EST-04-SC C30637BST-04-SC C30618BST-04-
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| Description |
Ultrafast high voltage rectifier 128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM Ultrafast rectifier PDP energy recovery 4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory High voltage ultrafast diode 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory 1 Mbit serial I²C bus EEPROM 512 Kbit Serial SPI bus EEPROM with high speed clock 256 Kbit serial SPI bus EEPROM with high-speed clock 300V HYPERFAST RECTIFIER HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION) 32 Kbit and 64 Kbit serial SPI bus EEPROMs with high-speed clock (CRT TV horizontal deflection) high voltage damper diode HIGH FREQUENCY SECONDARY RECTIFIERS 128 Kbit serial SPI bus EEPROM with high speed clock 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock 光电 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电 512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电 128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电 16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock 光电 Ultrafast recovery - 1200 V diode 光电 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电 Ultrafast recovery - high voltage diode 光电 Damper modulation diode for CRT TV 光电 DAMPER MODULATION DIODE FOR VIDEO 光电 4Kbit, 2Kbit and 1kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电 HIGH EFFICIENCY ULTRAFAST DIODE 光电 HIGH VOLTAGE ULTRAFAST RECTIFIER 光电 Ultrafast recovery diode 光电
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| File Size |
282.20K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1kbit Serial I2C Bus EEPROM 45 V, 100 mA NPN general-purpose transistors General purpose PIN diode 12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125 8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125 Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes CRIMP SET 0.14 - 0.50MM ; NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V 16-Channel LED Driver 100-HTQFP -20 to 85 8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85 Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85 ER 4C 4#4 PIN RECP WALL 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70 Power LDMOS transistor Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V 18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85 45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 4C 4#4 SKT RECP WALL Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85 NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V ER 23C 16 12 8 4 PIN RECP WALL D87 - CONNECTOR ACCESSORY ER 5C 3#12 2#0 SKT RECP WALL Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9 P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; VThree quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V NPN general purpose double transistor - Description: Current Mirror ER 30C 24#16 6#12 SKT RECP WAL 45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 35C 28#16 7#12 SKT RECP WAL ER 35C 28#16 7#12 PIN RECP WAL Dual high-voltage switching diodes The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS PowerMOS transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS CONNECTOR ACCESSORY 连接器附 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM TOPFET high side switch SMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
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173.56K /
29 Page |
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