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For cre Found Datasheets File :: 1953 Search Time::1.172ms
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				NXP Semiconductors Philips Semiconductors
Part No.	BLT71_8 BLT71 BLT71/8
OCR Text	...O V(BR)CEO V(BR)EBO ICES hFE Cc cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITION...
Description	UHF power transistor
File Size	102.30K / 12 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLT80
OCR Text	...O V(BR)CEO V(BR)EBO ICES hFE Cc cre Note 1. Measured under pulsed conditions: tp 200 s; 0.02. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC curr...
Description	UHF power transistor
File Size	102.21K / 12 Page	View it Online	Download Datasheet

				PERICOM[Pericom Semiconductor Corporation]
Part No.	PI6C102 PI6C102H
OCR Text	...V Supply Cons umption M ax. dis cre te cap loads , VDDQ2 = 2.625V All s tatic inputs = VDDQ3 or VSS 100A 72mA 100mA M ax. 3.3V Supply Cons umption M ax. dis cre te cap loads , VDDQ3 = 3.465V All s tatic inputs = VDDQ3 or VSS 500A 170mA 170m...
Description	Precision Clock Synthesizer for Mobile PCs
File Size	543.70K / 11 Page	View it Online	Download Datasheet

				PERICOM[Pericom Semiconductor Corporation]
Part No.	PI6C103 PI6C103H PI6C103-XXL PI6C103L
OCR Text	...V Supply Cons umption M ax. dis cre te cap loads , VDDQ2 = 2.625V All s tatic inputs = VDDQ3 or VSS 100A 72mA 100mA M ax. 3.3V Supply Cons umption M ax. dis cre te cap loads , VDDQ3 = 3.465V All s tatic inputs = VDDQ3 or VSS 500A 170mA 1...
Description	Precision Clock Synthesizer
File Size	526.69K / 12 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
Part No.	RFD16N06 RFD16N06SM
OCR Text	...hanel ower OSET, O51AA, O52AA) /cre* 16A, 60V * rDS(ON) = 0.047 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Solder...
Description	16A, 60V, 0.047 Ohm, N-Channel Power MOSFET 16A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFET
File Size	84.54K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5534
OCR Text	... Figure Symbol ICBO IEBO hFE fT cre \| S21e \|2 1 \| S21e \|2 2 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=5V, f=1MHz VCE=5V, IC=10mA, f=2GHz VCE=1V, IC=3mA, f=2GHz VCE=5V, IC=5mA, f=2GHz 90 10 8 13 0.3 10 8 1.2 2.0 0.6 Co...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications NPN Epitaxial Planar Silicon Transistors
File Size	43.50K / 5 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5536
OCR Text	...mbol ICBO IEBO hFE1 hFE2 fT Cob cre \| S21e \|2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=2V, IC=3mA VCE=2V, IC=50mA VCE=2V, IC=3mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=2V, IC=3mA, f=150MHz VCE=2V, IC=3mA, f=150MHz 13 80 70 1.0 1.7 1.1 0.8 16 1.8 3.0 ...
Description	NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier , OSC Applications
File Size	34.38K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5538
OCR Text	...mbol ICBO IEBO hFE1 hFE2 fT Cob cre \| S21e \|2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=3V, IC=7mA VCE=3V, IC=30mA VCE=3V, IC=7mA VCB=3V, f=1MHz VCB=3V, f=1MHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz 8 110 100 3 5.2 1.0 0.7 10.5 1.4 2.5 1.5 G...
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF OSC, High-Frequency Amplifier Applications
File Size	35.64K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5539
OCR Text	...ure Symbol ICBO IEBO hFE fT Cob cre \| S21e \|2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 10 90 6 7.5 0.85 0.6 12 1.1 2.0 1.3 Conditions Ratings ...
Description	NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
File Size	42.90K / 5 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BF824 BF824_3 BF824/T1
OCR Text	...ified. SYMBOL ICBO IEBO hFE VBE cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain base-emitter voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = -30 V IC = 0; VEB = -4 V IC = -1 mA; ...
Description	TRANSISTOR R.F SOT-23 PNP medium frequency transistor From old datasheet system
File Size	41.60K / 8 Page	View it Online	Download Datasheet

For cre Found Datasheets File :: 1953 Search Time::1.172ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |