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  cdma gps Datasheet PDF File

For cdma gps Found Datasheets File :: 851    Search Time::0.781ms    
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    CMY212

TriQuint Semiconductor
Part No. CMY212
OCR Text ...Y212 is particularly suited for cdma receiver applications. The device combines an ultra-linear mixer with LO - driver and a single stage IF...gps Receivers * * * * Package Outline and Pin Configuration, SCT598 Mixer RF in IF out ...
Description Ultra-linear Mixer with Integrated IF Amp and LO Buffer

File Size 160.68K  /  8 Page

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    CXD2B951GA-4 CXD2951GA-4

Sony Corporation
Part No. CXD2B951GA-4 CXD2951GA-4
OCR Text ...is available, such as GSM and W-cdma. (optional) 13.000MHz (GSM), 14.400MHz (cdma), 16.368MHz (gps), 19.800MHz (PDC/cdma), 26.000MHz (GSM) 176 pin LFLGA (Plastic) Radio * Image Rejection Mixer * VCO Tank * IF Filters Structure Silicon...
Description gps IC
Single Chip gps LSI

File Size 294.47K  /  26 Page

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    MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1

Freescale Semiconductor, Inc
Part No. MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1
OCR Text ...al Doherty Single - Carrier W - cdma Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg...gps (dB) 30.5 PAE (%) 34.7 Output PAR (dB) 8.7 ACPR (dBc) - 37.4 MD7IC2050NR1 MD7IC2050GNR1 MD7IC...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 589.59K  /  24 Page

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    MRF8S9220HR3 MRF8S9220HSR3

Freescale Semiconductor, Inc
Part No. MRF8S9220HR3 MRF8S9220HSR3
OCR Text ...e Lateral MOSFETs Designed for cdma base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for...gps (dB) 19.7 19.8 19.4 hD (%) 35.1 35.3 35.7 Output PAR (dB) 6.1 6.2 6.1 ACPR (dBc) - 37.4 - 37.5 -...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 345.23K  /  14 Page

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    MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF19120S MRF19120
OCR Text ...e Lateral MOSFETs Designed for cdma base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, cdma and multi...gps 500 mA, MRF19120 MRF19120S 500 mA, IMD 500 mA, MRF19120 MRF19120S IRL 500 mA, gps 500 mA, 500 ...
Description RF POWER FIELD EFFECT TRANSISTORS

File Size 343.87K  /  12 Page

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    MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MRF5P21180R6 MRF5P21180
OCR Text ... Lateral MOSFET Designed for W-cdma base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, cdma and multicarr...gps 12.5 14 -- dB 23 25.5 -- % IM3 -- -37.5 -35 dBc ACPR -- ...
Description N-Channel Enhancement-Mode Lateral MOSFET
RF Power Field Effect Transistor

File Size 406.67K  /  9 Page

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    MDE6IC7120GNR1 MDE6IC7120NR1

Freescale Semiconductor, Inc
Part No. MDE6IC7120GNR1 MDE6IC7120NR1
OCR Text ...al Doherty Single - Carrier W - cdma Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts Avg...gps (dB) 35.0 34.4 33.8 PAE (%) 42.0 40.6 39.1 Output PAR (dB) 6.2 6.8 6.9 ACPR (dBc) - 39.0 - 41.3 ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 504.68K  /  18 Page

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    9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT500XT ATC100B4R7BT500XT WCR08051KFI C5750X5R1H106M RO4350 222212018221 M

Freescale Semiconductor, Inc
Part No. 9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT500XT ATC100B4R7BT500XT WCR08051KFI C5750X5R1H106M RO4350 222212018221 MRF8S9102NR3
OCR Text ...de Lateral MOSFET Designed for cdma base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for...gps (dB) 23.1 23.1 22.8 D (%) 36.4 36.4 36.6 Output PAR (dB) 6.3 6.2 6.1 ACPR (dBc) --35.5 --36.1 --...
Description RF Power Field Effect Transistor

File Size 806.79K  /  16 Page

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    MRF6S18140HR3 MRF6S18140HR309 MRF6S18140HSR3

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRF6S18140HR3 MRF6S18140HR309 MRF6S18140HSR3
OCR Text ...Lateral MOSFETs Designed for N-cdma base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, cdma and multicarr...gps D IM3 ACPR IRL 15 25.5 -- -- -- 16 27.5 -36 -50.5 -10.5 18 -- -34.5 -48 -- dB % dBc dBc dB MR...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
   RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 433.06K  /  12 Page

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