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SGS Thomson Microelectronics
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| Part No. |
M29F800AB90M1 M29F800AB90N1
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| OCR Text |
... range option 3) 40 to 125 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase operations on all blocks will be possible. the transition from v ih to v id must be slower tha... |
| Description |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
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| File Size |
144.58K /
22 Page |
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Download Datasheet
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STMicroelectronics N.V.
ST Microelectronics
http://
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| Part No. |
M29W008AT90N1T M29W008AB M29W008AB90N5T M29W008AT120N5T -M29W008AB120N5T
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| OCR Text |
... temperature (3) C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output vo...erase timer bit dq3. outputs are valid when chip enable e and output enable g are active. the outp... |
| Description |
JFET-Input High Speed Dual Operational Amplifier 20-LCCC -55 to 125
Quad High-Speed JFET-Input Operational Amplifier 14-PDIP 8兆8，启动块低压单电源闪
JFET-Input High Speed Dual Operational Amplifier 8-CDIP -55 to 125 8兆8，启动块低压单电源闪
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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| File Size |
221.95K /
30 Page |
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Download Datasheet |
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ST Microelectronics
STMicroelectronics N.V.
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| Part No. |
M29W004BT M29W004BT55N6T
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| OCR Text |
...e range option 6) C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output vo...erase operations on all blocks will be possible. the transition from v ih to v id must be slower t... |
| Description |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，启动块低压单电源闪
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| File Size |
159.63K /
20 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
M59BW102
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| OCR Text |
...rating temperature 0 to 70 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output ...erase). v ss ground. v ss is the reference for all voltage measurements. device operations see tab... |
| Description |
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
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| File Size |
184.08K /
24 Page |
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it Online |
Download Datasheet |
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STMICROELECTRONICS
NUMONYX
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| Part No. |
M29F002BNT45K6 M29F002BNT45K3F M29F002BT90K1 M29F002BB70K6 M29F002BNB70K6F M29F002BNT70K6F M29F002BNT90K1E M29F002BNT90K3E M29F002BNT90K1T STMICROELECTRONICS-M29F002BNT90K6F M29F002BNT120N6F M29F002BNT120K3E M29F002BT120K3 STMICROELECTRONICS-M29F002BNT70N3T M29F002BT90N3 M29F002BNB55N1E M29F002BNB90N6F M29F002BNB55N6 NT90K1F
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| OCR Text |
... range option 3) ?40 to 125 c t bias temperature under bias ?50 to 125 c t stg storage temperature ?65 to 150 c v io (2) input or output vo...erase operations the memory will continue to use the program/erase supply current, i cc4 , for progr... |
| Description |
256K X 8 FLASH 5V PROM, 45 ns, PQCC32
256K X 8 FLASH 5V PROM, 70 ns, PQCC32
256K X 8 FLASH 5V PROM, 70 ns, PDSO32
256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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| File Size |
159.42K /
21 Page |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M36W108AT120ZM6T M36W108AB100ZM6T M36W108AT100ZM6T M36W108AB120ZM6T M36W108AB100ZM5T
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| OCR Text |
... temperature (3) C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output vo...erase or program mode the reset will take t plyh during which the ready/ busy (rb ) signal will be ... |
| Description |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product 81兆8，启动块闪存1兆位128KB的x8 SRAM的低电压多媒体存储产
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| File Size |
256.94K /
36 Page |
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STMicroelectronics N.V.
http://
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| Part No. |
M36DR232A M36DR232BZA M36DR232AZA
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| OCR Text |
...g temperature (3) C40 to 85 c t bias temperature under bias C40 to 125 c t stg storage temperature C55 to 150 c v io (2) input or output vol...erase timer bit dq3. outputs are valid when flash chip enable (ef ) and output enable (gf )or sram c... |
| Description |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
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| File Size |
335.42K /
46 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
M36DR432DA10ZA6T
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| OCR Text |
...g temperature (3) C40 to 85 c t bias temperature under bias C40 to 125 c t stg storage temperature C55 to 150 c v io (2) input or output vol...erase timer bit dq3. outputs are valid when flash chip enable (ef ) and output enable (gf )or sram c... |
| Description |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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| File Size |
336.76K /
46 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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