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    Hynix Semiconductor, Inc.
Part No. HMP451S6MMP8C-S6 HMP451S6MMP8C-Y5
OCR Text ...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig...
Description DDR DRAM MODULE, ZMA200 ROHS COMPLIANT, SODIMM-200

File Size 208.50K  /  17 Page

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    Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
Part No. HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 HMP351U6AFR8C-Y5 HMP351U7AFR8C-Y5 HMP351U7AFR8C-S6
OCR Text ...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, aut oprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is h...
Description 512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240
240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240

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    Hynix Semiconductor, Inc.
Part No. HMP351S6AFR8C-S6 HMP351S6AFR8C-S5 HMP351S6AFR8C-Y5
OCR Text ...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle., ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig...
Description 512M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A

File Size 289.11K  /  17 Page

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    http://
Part No. HYS64T32900EDL-25F-B2 HYS64T64920EDL-25F-B2 HYS64T32000EDL-2.5-B2 HYS64T64920EDL-2.5-B2 HYS64T32000EDL-25F-B2 HYS64T64020EDL-25F-B2 HYS64T32900EDL-2.5-B2 HYS64T64020EDL-2.5-B2 HYS64T128021EDL-2.5B2 HYS64T128921EDL-2.5B2
OCR Text ...oprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is h...
Description 200-Pin SO-DIMM DDR2 SDRAM Modules

File Size 1,856.86K  /  79 Page

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    C503B-BCS-CV0W0451 C503B-BCS-CV0W0452 C503B-BCS-CV0Z0461 C503B-BCS-CV0Z0462 C503B-BCS-CW0X0451 C503B-BCS-CW0X0452 CCCCC-

Marktech Corporate
Part No. C503B-BCS-CV0W0451 C503B-BCS-CV0W0452 C503B-BCS-CV0Z0461 C503B-BCS-CV0Z0462 C503B-BCS-CW0X0451 C503B-BCS-CW0X0452 CCCCC-DXG-XHHKKMN1 C503B-GAS-CB0C0782 C503B-GAS-CB0F0791 C503B-BAS-CZ0A0451 C503B-BAS-CZ0A0452 C503B-GCS-CZ0A0781 C503B-GCS-CZ0A0782 C503B-GCS-CZ0A0891 C503B-GCS-CZ0A0892 C503B-GAS-CC0D0782 C503B-GAS-CC0D0891 C503B-GAS-CC0D0892 C503B-BCS-CX0Y0451 C503B-GAS-CB0C0891 C503B-GAS-CC0D0781 C503B-GAS-CB0C0781 C503B-GAS-CB0C0892 C503B-GAS-CB0F0792 C503B-BCS-CX0Y0452 CCCCC-DXA-XHHKKMN1 C503B-BCN-CV0W0452 C503B-BCN-CV0W0451 C503B-BCN-CV0Z0461 C503B-BCN-CV0Z0462 C503B-BCN-CW0X0451 C503B-BCN-CW0X0452 C503B-GAN-CC0D0891 C503B-GAN-CC0D0892 C503B-GAN-CC0D0782 C503B-GAN-CC0D0781 C503B-GAN-CB0C0781 C503B-GAN-CB0C0892 C503B-GAN-CB0F0792 C503B-GAN-CB0C0782 C503B-GAN-CB0F0791 C503B-ban-CY0C0461 C503B-ban-CY0Z0451 C503B-ban-CZ0A0452 C503B-ban-CY0C0462 C503B-ban-CZ0A0451 C503B-ban-CY0Z0452 C503B-GCN-CY0Z0781 C503B-GCS-CY0Z0782 C503B-GCS-CY0Z0781 C503B-GCN-CY0Z0782 C503B-GCS-CY0C0791 C503B-GCS-CY0C0792 C503B-GCS-CY0Z0891 C503B-GCS-CY0Z0892 C503B-BAS-CY0C0461 C503B-BAS-CY0C0462 C503B-BAS-CY0Z0451 C503B-BAS-CY0Z0452 C503B-BCN-CX0Y0451 C503B-BCN-CX0Y0452 CCCCC-DXW-XHHKKMN1 CCCCC-DXB-XHHKKMN1 C50
OCR Text ban/gas/gan (15 degrees) c503b-bcs/bcn/gcs/gcn (30 degrees) data sheet ? features ? size (mm): 5 ? color and typical dominant wavelength (nm): ...
Description Cree? 5-mm Blue and Green Round LED

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    HYS64T128020EDL-3.7-B

Qimonda AG
Part No. HYS64T128020EDL-3.7-B
OCR Text ...oprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is h...
Description 200-Pin Small-Outlined DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.5 ns, DMA200

File Size 1,468.43K  /  45 Page

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    HYS64T128020EDL-3-C HYS64T128020EDL-2.5-C HYS64T128020EDL-3.7-C HYS64T256020EDL-2.5-C

Qimonda AG
Part No. HYS64T128020EDL-3-C HYS64T128020EDL-2.5-C HYS64T128020EDL-3.7-C HYS64T256020EDL-2.5-C
OCR Text ...oprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. during a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is h...
Description 200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200
200-Pin SO-DIMM DDR2 SDRAM Modules 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200

File Size 1,459.53K  /  48 Page

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    M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
OCR Text ...toprecharge is selected and BA0-ban defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-ban to control which bank(s) to precharge. If AP is high, a...
Description 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes

File Size 325.20K  /  19 Page

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    TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
Part No. 856530 856530-15
OCR Text ban dwidth 60 mhz ? low loss ? high attenuation ? no impedan ce matching required for operation at 50 ? ? single-ende d operation ? ceramic surface mount package (smp) ? hermetic ? rohs comp liant (2002/9 5 /ec), pb-fr...
Description Filter- U.S. PCS (Tx) Full-band 1 FUNCTIONS, 1880 MHz, SAW FILTER
   1880 MHz SAW Filter

File Size 433.90K  /  6 Page

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