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California Eastern Laboratories
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Part No. |
NX5313
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OCR Text |
...MF
APPLICATIONS
* FTTH PON (b-pon, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5313 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed f... |
Description |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
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File Size |
157.66K /
4 Page |
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California Eastern Laboratories, Inc.
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Part No. |
NX5315 NX5315EH-AZ NX5315EK-AZ
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OCR Text |
...mm
APPLICATIONS
* FTTH PON (b-pon, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5315 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed ... |
Description |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
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File Size |
307.66K /
5 Page |
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CEL[California Eastern Labs]
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Part No. |
NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06
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OCR Text |
.../s.
APPLICATION
* FTTH PON (b-pon, G-PON, GE-PON 10 km) system
FEATURES
* Optical output power * Low threshold current * Differential Efficiency * InGaAs monitor PIN-PD * CAN package * Focal point Po = 13.0 mW lth = 6 mA
d = 0.5 ... |
Description |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
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File Size |
196.46K /
7 Page |
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PHILIPS[Philips Semiconductors]
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Part No. |
SA8016WC SA8016 SA8016DH
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OCR Text |
...control bits CP0 and CP1 in the B-word (see Charge Pump table). The dead zone (caused by finite time taken to switch the current sources on ...PON) or software (PD). The PON signal is exclusively ORed with the PD bits in B-word. If PON = 0, th... |
Description |
2.5GHz low voltage fractional-N synthesizer
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File Size |
251.61K /
20 Page |
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it Online |
Download Datasheet |
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Price and Availability
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