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For a dd a Found Datasheets File :: 52925    Search Time::3.266ms    
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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...yp. (at VGS = -10 V, I D = -2.5 a) * 4V gate drive devices. * Large current capacitance ID = -5 a Outline TO-92 Mod D G 32 1 ...dd = -10 V -25 V -50 V I D = -5 a V GS (V) 0 0 1000 300 100 30 10 3 Switching Characteristics V G...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... 30 150 -55 to +150 Unit V V a a a a mJ W C C EaR* Pch* Tch Tstg Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Valu...dd = -10 V -25 V -50 V V DS V GS V dd = -10 V -25 V -50 V Switching Characteristics 0 1000 500 Sw...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... 75 150 -55 to +150 Unit V V a a a a mJ W C C EaR* Pch* Tch Tstg Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Valu...dd = -50 V -25 V -10 V I D = -50 a V DS V GS V GS (V) 0 0 Switching Characteristics 1000 t d(off)...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... 20 150 -55 to +150 Unit V V a a a W C C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakd...dd = -10 V PW = 10 s, duty < 1 % = -10 Drain to Source Voltage Gate to Source Voltage -2...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ...2 1 150 -55 to +150 Unit V V a a a W C C 1. PW 100s, duty cycle 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) E...dd = -5 V -10 V -10 V DS Switching Time t (ns) -4 200 t d(off) 100 tf 50 tr Drain to Sou...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...20 -2 -4 -2 -2 0.34 Unit V V a a a a mJ W C C EaR Pch Tch Tstg Note3 1 150 -55 to +150 1. PW 10s, duty cycle 1 % 2. value at ...dd = -10 V -25 V -50 V V GS (V) 0 0 100 50 t d(off) tf t d(on) 10 5 tr -4 Drain to...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... 25 150 -55 to +150 Unit V V a a a a mJ W C C EaR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at T...dd = -30 V Pw = 5 s, duty < 1 % t d(off) tf tr t d(on) 0 V dd = -10 V -25 V -50 V I D = -10 a ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... 20 150 -55 to +150 Unit V V a a a a mJ W C C EaR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at T...dd = -10 V -25 V -50 V V GS (V) V DS 0 100 50 Switching Time t (ns) Switching Charac...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... 20 150 -55 to +150 Unit V V a a a a mJ W C C EaR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at T...dd = -10 V -25 V -50 V V GS (V) 0 0 I D = -7 a 1000 300 100 30 10 3 1 -0.1 tf tr t d(on)...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... 20 150 -55 to +150 Unit V V a a a a mJ W C C EaR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at T...dd = -10 V -25 V -50 V I D = -10 a V DS V GS V dd = -10 V -25 V -50 V 8 16 24 32 0 1000 300 10...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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