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Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BFP280W Q62702-F1504
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OCR Text |
...er Gain Gma, Gms = f(IC)
f = 0.9ghz VCE = Parameter
22 10V 2V dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
17 dB 15 10V
G
18
G
14 13 16 1V 14 0.7V 12 8 10 7 6 8 0 2 4 6 8 mA IC 11 5 0 2 4 6 8 mA IC 11 0.7V 12 11 ... |
Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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File Size |
59.70K /
7 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BFP280 Q62702-F1378
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OCR Text |
...er Gain Gma, Gms = f(IC)
f = 0.9ghz VCE = Parameter
22 10V 2V dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
18
dB
10V 3V
G
18
G
14 2V 16 1V 14 0.7V 12 8 0.7V 10 6 10 1V 12
8 0 2 4 6 8 mA IC 11
4 0 2 4 ... |
Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器 NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems) From old datasheet system
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File Size |
60.12K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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