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Infineon Technologies
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| Part No. |
K25T120
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| OCR Text |
...400V
500V
600V
700V
800v
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25a, RG=22, Dynamic test circuit in Figure E)
VCE,... |
| Description |
Search --To IKW25T120
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| File Size |
923.28K /
16 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTGF50H120TG
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| OCR Text |
...F = 120A IF = 60A IF = 60A VR = 800v di/dt =400A/s Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 250 500
Unit V A A
trr Qrr
...25a 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=100A Ic=50A
Ic=100A
Ic=50A
Ic=25a
10 ... |
| Description |
Full - Bridge NPT IGBT Power Module
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| File Size |
285.89K /
6 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5558 NTE5550 NTE5552 NTE5554
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| OCR Text |
.... . . . . . . . . . . . . . . . 800v Forward Current (TC = +85C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25a (All Conduction Angles), IT(AV) . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25a. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25a.
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| File Size |
19.41K /
2 Page |
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it Online |
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Price and Availability
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