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  8 16-ch Datasheet PDF File

For 8 16-ch Found Datasheets File :: 25729    Search Time::1.453ms    
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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ...cal Output Characteristics -50 -8 V -3.5 V Pulse Test -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS =...16 -20 V GS (V) 0.05 0.02 0.01 -1 -3 -10 -30 -100 -300 -1000 Drain Current ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...cal Output Characteristics -50 -8 V -3.5 V -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V -20 ...16 -20 V GS (V) -20 A 0.02 0.01 -1 -3 -10 -30 -100 -300 -1000 Drain Current I ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...ut Characteristics -4.5 V -5 V -8 V -100 (A) Typical Transfer Characteristics V DS = -10 V Pulse Test 25 C -80 -4 V -80 ID ...16 -20 V DS (V) -60 Drain Current -40 -20 75 C Tc = -25 C 0 -1 -2 -3 Gate to Source Volt...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ557 2SJ557-T2B 2SJ557-T1B

NEC[NEC]
Part No. 2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text ...-0.06 0.65-0.15 +0.1 2.8 0.2 3 1.5 0 to 0.1 1 2 FEATURES * Can be driven by a 4 V power source * Low on-state resista...16 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -10 V, ID = -1.0 A VGS = -4.5...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.99K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ...source Tc = 25C Pulse test -15 -8 -10 -6 -5 -4.8 -5 -10 -4 -15 -6 -8 ID - VDS Common source Tc = 25C, Pulse test -5.75 -1.6 (A) ...16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 1...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ...3/4 Typ. 3/4 3/4 3/4 3/4 1.85 1.8 381 52 157 5 Max 10 -100 3/4 -3.5 2.55 3/4 3/4 3/4 pF Unit mA mA V V W S 3/4 10 V ID = 1.0 A VOUT 3/4 3/4 3/4 ns 3/4 3/4 3/4 Turn-on time Switching time Fall time VGS 0V 20 50 9 R...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ... V) Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source v...16 -64 75 292 -16 7.5 150 -55 to150 Unit V V V A JEDEC W mJ A mJ C C SC-97 2-9F1B Drain p...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ... V) Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source v...16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, I...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...rain Current ID (A) 1.2 0.8 4V 0.4 VGS = 3.5 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 0.8 75C 0.4 TC = 25C 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 -25C 4 2SK1151(L)(S), 2SK1152(L)(S) Drain to Source Saturation Vo...
Description    Silicon N-Channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ... 90 15 7 20 30 20 0.9 300 3.0 2.8 3.0 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0, diF/d...16 Drain to Source Voltage VDS (V) 20 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 4 ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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