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  6a 800v Datasheet PDF File

For 6a 800v Found Datasheets File :: 865    Search Time::3.593ms    
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    2SC3461

Inchange Semiconductor Company Limited
Part No. 2SC3461
OCR Text ...CB=800v; IE=0 VEB=5V; IC=0 IC=0.6a ; VCE=5V IC=3A ; VCE=5V 10 8 MIN 800 1100 7 2SC3461 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V V V 2.0 1.5 10 10 40 |I |I V V A A ...
Description Silicon NPN Power Transistors

File Size 183.51K  /  4 Page

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    2SC3910

Inchange Semiconductor Company Limited
Part No. 2SC3910
OCR Text ...on voltage i c = 8.0a; i b = 1.6a 1.0 v v be (sat) base-emitter saturation voltage i c = 8.0a; i b = 1.6a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c ...
Description isc Silicon NPN Power Transistor

File Size 72.89K  /  2 Page

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    CET[Chino-Excel Technology]
Part No. CEF07N8
OCR Text ... = 50V, ID =4A VDD = 400V, ID = 6a, VGS = 10V RGEN=25 800 50 100 2 1.8 4 3 32 68 194 70 70 45 95 230 98 85 4 2.0 V A nA ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward T...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 42.34K  /  5 Page

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    SSFP7N80

GOOD-ARK Electronics
Part No. SSFP7N80
OCR Text ...ability VDSS = 800v ID25 = 6.6a RDS(ON) = 1.9 Description StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduc...
Description StarMOST Power MOSFET

File Size 122.75K  /  2 Page

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    SANYO
Part No. 2SC4430
OCR Text ... Symbol VCE(sat) VBE(sat) fT IC=6a, IB=1.2A IC=6a, IB=1.2A VCE=10V, IC=0.8A VCB=10V, f=1MHz 1100 800 7 800 0.5 3.0 0.3 15 215 Conditions Ratings min typ max 2.0 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA,...
Description NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications

File Size 112.48K  /  5 Page

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    STIL06T5 STIL08T5 STIL STIL04P5 STIL04-P5 STIL04T5 STIL04-T5 STIL06-T5 STIL08-T5

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STIL06T5 STIL08T5 STIL STIL04P5 STIL04-P5 STIL04T5 STIL04-T5 STIL06-T5 STIL08-T5
OCR Text ...rect voltage for one Iout(AV) = 6a power switch Iout(AV) = 8A Dynamic resistance for one power switch Iout(AV) = 4A Iout(AV) = 6a Iout(AV) =...800v 1.E+01 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-04 1.E+00 STIL04 VR(OUT)=400V 1.E-01 1.E...
Description AC INRUSH CURRENT LIMITER

File Size 150.23K  /  11 Page

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    2SC3461

Savantic, Inc.
Part No. 2SC3461
OCR Text ...CB=800v; IE=0 VEB=5V; IC=0 IC=0.6a ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.6a ; VCE=10V 10 8 MIN 800 1100 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SC3461 TYP. MAX UNIT V V V 2...
Description Silicon NPN Power Transistors

File Size 207.52K  /  4 Page

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    FQA13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA13N80
OCR Text ... TM Features * * * * * * 12.6a, 800v, RDS(on) = 0.75 @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS !" " " TO-3P FQA Se...
Description 800v N-Channel MOSFET

File Size 730.26K  /  8 Page

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    2SC3460

Savantic, Inc.
Part No. 2SC3460
OCR Text ...fe operation APPLICATIONS *800v/6a switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO...
Description Silicon NPN Power Transistors

File Size 209.24K  /  4 Page

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
OCR Text ...State Resistance (VGS = 10V, 6a) Ohms A nA Volts 7-2003 050-7002 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3

File Size 93.49K  /  5 Page

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