| |
|
 |
CET[Chino-Excel Technology]
|
| Part No. |
CEF07N8
|
| OCR Text |
... = 50V, ID =4A VDD = 400V, ID = 6a, VGS = 10V RGEN=25
800 50 100 2 1.8 4 3 32 68 194 70 70 45 95 230 98 85 4 2.0
V A nA
ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward T... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
42.34K /
5 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SANYO
|
| Part No. |
2SC4430
|
| OCR Text |
... Symbol VCE(sat) VBE(sat) fT IC=6a, IB=1.2A IC=6a, IB=1.2A VCE=10V, IC=0.8A VCB=10V, f=1MHz 1100 800 7 800 0.5 3.0 0.3 15 215 Conditions Ratings min typ max 2.0 1.5 Unit V V MHz pF V V V V s s s
Cob V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA,... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications
|
| File Size |
112.48K /
5 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
| Part No. |
APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
|
| OCR Text |
...State Resistance
(VGS = 10V, 6a)
Ohms A nA Volts
7-2003 050-7002 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
| File Size |
93.49K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|