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    HTX16-600

SemiHow Co.,Ltd.
Part No. HTX16-600
OCR Text ...ge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate Voltage Peak Gate Current Peak Gate Power Dissipation Isolation Bre...600 Electrical Characteristics Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate ...
Description 600V 16A TRIAC

File Size 315.74K  /  6 Page

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    BYC20X-600 BYC20X-600-15

NXP Semiconductors
Part No. BYC20X-600 BYC20X-600-15
OCR Text ...inals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity 65 %; clean and dust free from pin 1 (cathode) to ex...600_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 29 November 200...
Description Hyperfast power diode
Rectifier diode, hyperfast

File Size 59.54K  /  10 Page

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    HTS138-600

SemiHow Co.,Ltd.
Part No. HTS138-600
OCR Text ...ge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate Voltage Peak Gate Current Peak Gate Power Dissipation Isolation Bre...600 12.0 100/110 10 2.0 5.0 1500 -40 to +125 -40 to +125 U nits V A A V A W V SEMIHOW REV.1...
Description INSULATION TYPE TRIAC (TO-220F)

File Size 313.85K  /  5 Page

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    SEMIWELL[SemiWell Semiconductor]
Part No. BT139-600 BT139F-600
OCR Text ...60Hz 100 VGT (25 C) 1 50 50Hz 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 BT139-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 1...
Description Bi-Directional Triode Thyristor

File Size 589.04K  /  5 Page

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    BYV25D-600 BYV25D-600-15

NXP Semiconductors
Part No. BYV25D-600 BYV25D-600-15
OCR Text ...e Figure 1 [1] Min - Typ 50 Max 3.0 - Unit K/W K/W thermal resistance from junction to ambient in free air Device mounted...600_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 July 2008 ...
Description Rectifier diode, ultrafast
   Rectifier diode, ultrafast

File Size 59.22K  /  9 Page

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    BYC8-600

Philips Semiconductors
NXP
Part No. BYC8-600
OCR Text ... = 1 a; v r = 30 v; di f /dt = 50 a/ m s - 30 52 ns t rr reverse recovery time i f = 8 a; v r = 400 v; - 19 - ns di f /dt = 500 a/ m s t ...600 ultrafast, low switching loss fig.3. maximum forward dissipation as a function of average for...
Description Rectifier diode ultrafast/ low switching loss

File Size 61.92K  /  6 Page

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    ROHM[Rohm]
Part No. 1SR139-600
OCR Text ... 3.00.2 6 291 2.50.2 Construction Silicon epitaxial planar Manufacture Date Structure (Unit : mm) IVORY H2...600 1 40 150 -40 to +150 Unit V V A A Electrical characteristics (Ta=25C) Parameter Forward vo...
Description Rectifier diode

File Size 153.87K  /  4 Page

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    ROHM[Rohm]
Part No. 1SR154-600
OCR Text ...2 0.1 5.00.3 1 5 4.50.2 1.20.3 Features 1) Small power mold type. (PMDS) 2) High reliability. 2.0 2.60.2 Constru...600 1 30 150 -55 to +150 5.30.1 0.05 9.50.1 Unit V V A A Min. - Typ. - Max. 1.1 10...
Description Rectifier diode

File Size 148.38K  /  4 Page

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    BYV25X-600 BYV25X-600-15

NXP Semiconductors N.V.
Part No. BYV25X-600 BYV25X-600-15
OCR Text ...inals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity 65 %; clean and dust free from cathode to external h...600_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 12 August 2008 ...
Description Rectifier diode, ultrafast
Ultrafast power diode
   Rectifier diode, ultrafast

File Size 65.36K  /  9 Page

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    BYV25G-600 BYV25G-600-15

NXP Semiconductors N.V.
Part No. BYV25G-600 BYV25G-600-15
OCR Text ...stics trr reverse recovery time 50 60 ns NXP Semiconductors BYV25G-600 Ultrafast rectifier diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol n.c. K A K Description not connected cathode anode mounting ...
Description    Ultrafast rectifier diode
Ultrafast power diode

File Size 143.18K  /  11 Page

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