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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM600HA-5F
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| OCR Text |
...llimeters 108.0 93.00.25 16.0 7.5 17.5 29.0 20.0 24.0 7.9 6.0 62.0 48.0 Dimensions N P Q R S T U V W X Y Inches 0.39 0.39 0.51 0.33 1.42 1.0...1200A/s IE = 600A, diE/dt = -1200A/s VGE = 0V, VCE = 10V Test Conditions Min. -- -- -- -- -- -- -- -... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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| File Size |
45.01K /
4 Page |
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it Online |
Download Datasheet
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HA-5F
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| OCR Text |
...g Amperes 600 VCES Volts (x 50) 5
E E
C
G
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.25 3.6...1200A/ms IE = 600A, diE/dt = -1200A/ms VGE = 0V, VCE = 10V Test Conditions Min. -- -- -- -- -- -- --... |
| Description |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
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| File Size |
51.12K /
4 Page |
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it Online |
Download Datasheet |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PHMB1200B12
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| OCR Text |
... +150 -40 to +125 2500 3 1.4 10.5
Unit
V V A W C C V N*m
Collector Power Dissipation Junction Temperature Range Storage Temperature R...1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V
... |
| Description |
IGBT MODULE Single 1200A 1200V
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| File Size |
109.02K /
3 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
MEO500-06DA
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| OCR Text |
...5C TC = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz)...1200A IF= 600A IF= 300A
IF=1200A 100 IF= 600A IF= 300A
200
5
50
0 0.0
0.4
0.8
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| Description |
600V fast recovery epitaxial diode (FRED) module
Fast Recovery Epitaxial Diode (FRED) Module(姝ｅ??垫?514A??揩???澶??寤跺?浜??绠℃ā??
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| File Size |
55.46K /
2 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM600HU-12H
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| OCR Text |
...107.0 93.00.25 62.0 48.00.25 13.5 12.55 10.0 Dimensions H J K L M N P Inches 1.02 0.37 1.14 0.81 0.26 Dia. 1.34 +0.04/-0.02 1.02 +0.04/-0.02...1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ.... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
41.35K /
4 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HU-12H
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| OCR Text |
...107.0 93.00.25 62.0 48.00.25 13.5 12.55 10.0 Dimensions H J K L M N P Inches 1.02 0.37 1.14 0.81 0.26 Dia. 1.34 +0.04/-0.02 1.02 +0.04/-0.02...1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ.... |
| Description |
Single IGBTMOD 600 Amperes/600 Volts
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| File Size |
56.28K /
4 Page |
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it Online |
Download Datasheet |
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Eupec Power Semiconductors
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| Part No. |
FF1200R12KE3
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| OCR Text |
... 1200 1200 1600 2400 V A A A
5
kW
+/- 20
V
1200
A
2400
A
It
300
k As
RMS, f= 50Hz, t= 1min.
VISOL
...1200A, VGE= 15V, Tvj= 25C, IC= 1200A, VGE= 15V, Tvj= 125C, IC= 48mA, VCE= VGE, Tvj= 25C, VGE= -15V..... |
| Description |
IGBT-Modules
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| File Size |
122.25K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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