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400 600 800v Datasheet PDF File

For 400 600 800v Found Datasheets File :: 1792 Search Time::2.359ms
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				Micro Commercial Compon... MCC[Micro Commercial Components]
Part No.	MB506 MB501 MB5010 MB502 MB508 MB504 MB5005
OCR Text	400 Amps omponents 21201 Itasca Street Chatsworth !"# $ % !"# MB5005 THRU MB5010 50 Amp Single Phase Bridge Rectifier 50 to 100...600 50 500 400 300 Amps 200 100 40 30 Amps 20 10 Single Phase, Half Wave 60Hz Resisti...
Description	50 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
File Size	76.67K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STP4NC80Z STB4NC80ZT4 STB4NC80Z-1 STB4NC80Z STP4NC80ZFP
OCR Text	...in Charge Test Conditions VDD = 400 V, ID = 2 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 640V, ID = 4A, VGS = 10V Min. Typ. 27 ...600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044...
Description	N-CHANNEL 800v 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET N沟道800v.4欧姆4A条到22020FP采用D2PAK I2PAK稳压第三MOSFET的保护POWERMESH N-CHANNEL 800v - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800v 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMESH⑩三MOSFET N-CHANNEL 800v - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 800v - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	524.50K / 13 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67079-A1001-A10 C67079-A1001-A6 BRT11_13 BRT11 C67079-A1042-A8 BRT11H BRT11M BRT12H BRT12M BRT13H BRT13M C67079-A1000-A10 C67079-A1000-A6 C67079-A1002-A10 C67079-A1002-A6 C67079-A1041-A11 C67079-A1041-A14 C67079-A1041-A5 C67079-A1041-A6 C67079-A1041-A8 C67079-A1042-A11
OCR Text	...BRT 12 H Opt. 1 6 7 VDRM 400 V 400 V 600 V 600 V 600 V 600 V 600 V 600 V 800 V 800 V 800 V 800 V ITRMS 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA IFT 2 mA 3 mA 2 mA 2 mA 2 mA 2 ...
Description	Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Cable Receptacle; Insert Arrangement:16-23 SITACO AC开关零电压开关无 SITACO AC Switches Without Zero Voltage Switch SITACO AC开关零电压开关无 Circular Connector; Body Material:Aluminum; Series:PT01; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Pin; Insert Arrangement:16-23 From old datasheet system
File Size	166.44K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPA08N80C3 SPP08N80C3
OCR Text	...10 -1 0 100 200 300 400 500 600 800 V VDS 19 Typ. Coss stored energy Eoss=f(VDS) 9 J 7 E oss 6 5 4 3 2 1 0 0 100 200 300 400 500 600 800 V VDS Page 9 2003-07-02 Final data ...
Description	Cool MOS?/a> Power Transistor Cool MOS⑩ Power Transistor Cool MOS Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800v C2 marking to C3. 800v C2 ...
File Size	249.57K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7NC80Z
OCR Text	...g Qgs Qgd Test Conditions VDD = 400 V, ID = 3 A RG = 4.7 VGS = 10 V ( see test circuit, Figure 3) VDD = 640 V, ID = 6 A, VGS = 10V Min. Typ....600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044...
Description	6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNEL MOSFET New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape N-CHANNEL 800v - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 800v - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 800v - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET N-CHANNEL 800v - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
File Size	540.50K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	STP3NB80 STP3NB80FP 5954
OCR Text	... Charge Test Con ditions V DD = 400 V R G = 4.7 V DD =640 V ID = 1.3 A VGS = 10 V ID = 3 A V GS = 10 V Min. T yp. 12 10 17 6.5 7.5 Max. 17 ...600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.01...
Description	N - CHANNEL 800v - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET -频道800v 4.6ohm - 2.6A的电 TO-220/TO-220FP PowerMESH MOSFET From old datasheet system N - CHANNEL 800v - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 800v - 4.6 Ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET
File Size	105.48K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STU9NB80 6748
OCR Text	... Charge Test Con ditions V DD = 400 V R G = 4.7 V DD = 640 V R G = 4.7 ID = 4.6 A VGS = 10 V I D = 9 A V GS = 10 V VGS = 10 V Min. T yp. 28 20 53 13 25 74 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-vo...
Description	N-CHANNEL 800v - 0.85 Ohm - 9.3A - TO-247 PowerMESH MOSFET From old datasheet system N-CHANNEL 800v - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
File Size	81.62K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BT131SERIES
OCR Text	....0 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled tu...
Description	logic level
File Size	36.63K / 6 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BT131W-600NBSP BT131W-500NBSP BT131W-500
OCR Text	... 2 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled tu...
Description	Triac From old datasheet system
File Size	56.90K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP3N80
OCR Text	...GS = 10 V (Note 4, 5) VDD = 400 V, ID = 3.0 A, RG = 25 (Note 4, 5) -------- 15 40 30 30 15 3.5 7.7 40 90 70 70 19 --- ns n...600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 160V 10 Ciss ...
Description	800v N-Channel MOSFET
File Size	651.48K / 8 Page	View it Online	Download Datasheet

For 400 600 800v Found Datasheets File :: 1792 Search Time::2.359ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |