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  4.800v Datasheet PDF File

For 4.800v Found Datasheets File :: 5685    Search Time::1.984ms    
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MICROSEMI[Microsemi Corporation]
Part No. APTM120DDA57T3G
OCR Text ...22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 1...800V ID = 17A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Inductive s...
Description Dual Boost chopper MOSFET Power Module

File Size 288.21K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120DA29T
OCR Text ...in Typ Max 0.16 0.9 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz T...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Boost chopper MOSFET Power Module

File Size 308.99K  /  6 Page

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    APT35GP120BG

Microsemi Corporation
Part No. APT35GP120BG
OCR Text ...racteristics min typ max 1200 3 4.5 6 3.3 3.9 3 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge =...800v r g = 5 ? 0.0896 0.140 0.0108 0.228 dissipated power (watts) t j (c) t c (c) z ext ...
Description POWER MOS 7? IGBT

File Size 250.77K  /  6 Page

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    APT35GP120B2DF2

Advanced Power Technology
Part No. APT35GP120B2DF2
OCR Text ...racteristics min typ max 1200 3 4.5 6 3.3 3.9 3 500 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge =...800v v ge = 15v i c = 35a r g = 5 ? t j = +25c inductive switching (125c) v cc = 800v v ge...
Description Power MOS 7 IGBT

File Size 119.12K  /  7 Page

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    Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
Part No. APTM120DA29TG
OCR Text ...in Typ Max 0.16 0.9 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz T...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Boost chopper MOSFET Power Module 34 A, 1200 V, 0.348 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 280.29K  /  6 Page

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    SGS Thomson Microelectronics
Part No. STP4NC80ZFP
OCR Text 4 w - 4a to-220/to-220fp/i2pak zener-protected powermesh ? iii mosfet (1)i sd 4a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax . (*)puls...800v < 2.8 w 4a stb4nc80z-1 800v < 2.8 w 4a symbol parameter value unit stp(b)4nc80z(-1) stp4nc80zfp...
Description N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET

File Size 124.18K  /  11 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. ST303C12LCP2L ST303C08LCK2 ST303C08LCK2L
OCR Text ...rt number 3 - 3 = fast turn off 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - l = puk case to-200...800v dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 t q (s) 10 cn dn en fn * hn ...
Description 995 A, 1200 V, SCR, TO-200AC
995 A, 800 V, SCR, TO-200AC

File Size 188.22K  /  10 Page

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MICROSEMI[Microsemi Corporation]
Part No. APTM120DA15G
OCR Text ...25 30 0 1 2 3 4 5 6 7 8 9 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current...800V RG=1.2 T J=125C L=100H Rise and Fall times vs Current 80 VDS=800V RG=1.2 T J=125C L=100H ...
Description Boost chopper MOSFET Power Module

File Size 267.96K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTM120A29FT
OCR Text ...5C Tj = 125C Tj = 25C Tj = 125C 4 14 Max 34 25 1.3 18 320 650 Unit A V V/ns ns C APT website - http://www.advancedpower.com 2-6 ...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Phase Leg MOSFET Power Module

File Size 310.23K  /  6 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTM120A29FTG
OCR Text ...5C Tj = 125C Tj = 25C Tj = 125C 4 14 IS = - 34A VR = 600V diS/dt = 200A/s Max 34 25 1.3 18 320 650 Unit A V V/ns ns C July, 2006 2...800V RG =2.5 T J=125C L=100H Rise and Fall times vs Current 80 V DS =800V RG =2.5 T J=125C L=100...
Description Phase Leg MOSFET Power Module

File Size 286.52K  /  6 Page

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