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Advanced Power Electronics
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| Part No. |
09N70P AP09N70P
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| OCR Text |
...e on-resistance v gs =10v, i d =4.5a - - 0.75 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance...675v ap09n70p/r 100 30v
fig 1. typical output characteristics fig 2. typ... |
| Description |
Search --To AP09N70P
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
112.51K /
6 Page |
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it Online |
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INTERSIL CORP
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| Part No. |
ISL12022IBZ
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| OCR Text |
...ble trip levels, from 2.295v to 4.675v ? oscillator failure detection ? time stamp for first v dd to v bat , and last v bat to v dd ? 128 bytes batter y-backed user sram ?i 2 c bus? - 400khz clock frequency ? 8 ld soic package ? pb-free ... |
| Description |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation ±5ppm with Auto Day Light Saving; Temperature Range: -40°C to 85°C; Package: 8-SOIC
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| File Size |
399.68K /
28 Page |
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it Online |
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LSI
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| Part No. |
LS6525
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| OCR Text |
... 5.5 v
? 652 5- 030 71 3- 4 fi gure 2 block diag ram
? 652 5- 030 71 3- 5 l1 68 nh c1 1 f c 2 1 f r1 2 m c3 ... |
| Description |
BATTERY POWERED LOW-POWER PIR SENSOR INTERFACE
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| File Size |
264.09K /
5 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
ISL12022
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| OCR Text |
...ble trip levels, from 2.295v to 4.675v ? oscillator failure detection ?time stamp for first v dd to v bat , and last v bat to v dd ? 128 bytes battery-backed user sram ?i 2 c bus? - 400khz clock frequency ? 1a typical battery current ? p... |
| Description |
Low Power RTC with Battery-Backed SRAM and Embedded Temp Compensation ppm with Auto Day Light Saving
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| File Size |
580.23K /
29 Page |
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it Online |
Download Datasheet |
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Price and Availability
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