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  4-32v Datasheet PDF File

For 4-32v Found Datasheets File :: 2838    Search Time::1.844ms    
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    AP9963AGS-HF AP9963AGS-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP9963AGS-HF AP9963AGS-HF-14
OCR Text ...0v low on-resistance r ds(on) 4.2m fast switching characteristic i d 150a rohs compliant & halogen-free description absolute maximum ...32v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 93.65K  /  4 Page

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    AP9962GM

Advanced Power Electronics Corp.
Part No. AP9962GM
OCR Text ... =10v, i d =7a - - 25 m ? v gs =4.5v, i d =5a - - 40 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transc...32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 204.35K  /  5 Page

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    AP9962GJ AP9962GH AP9962GH-14 AP9962GJ-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP9962GJ AP9962GH AP9962GH-14 AP9962GJ-14
OCR Text ...ermal resistance, junction-case 4.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications ...32v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gat...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Single Drive Requirement

File Size 95.30K  /  4 Page

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    AP9962AGJ-HF AP9962AGJ-HF-14 AP9962AGH-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP9962AGJ-HF AP9962AGJ-HF-14 AP9962AGH-HF-14
OCR Text ...ermal resistance, junction-case 4.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications ...32v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gat...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Single Drive Requirement

File Size 93.96K  /  4 Page

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    IRFB7437PBF

International Rectifier
Part No. IRFB7437PBF
OCR Text 4/20/12 www.irf.com 1 hexfet power mosfet benefits improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capac...32v , see fig. 11 v gs = 0v, v ds = 0v to 32v t j = 25c, i s = 100a, v gs = 0v integra...
Description HEXFETPower MOSFET

File Size 266.15K  /  10 Page

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    IRF5803TRPBF IRF5803PBF

International Rectifier
Part No. IRF5803TRPBF IRF5803PBF
OCR Text 4 i d @ t a = 70c continuous drain current, v gs @ -10v -2.7 a i dm pulsed drain current -27 p d @t a = 25c power dissipation 2.0 ...32v, v gs = 0v ??? ??? -25 v ds = -32v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ...
Description HEXFETPower MOSFET

File Size 200.92K  /  9 Page

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    AP9561AGH-HF AP9561AGH-HF14

Advanced Power Electronics Corp.
Part No. AP9561AGH-HF AP9561AGH-HF14
OCR Text ...10v, i d =-24a - - 18 m v gs =-4.5v, i d =-20a - - 26 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward tr...32v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 57.37K  /  4 Page

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    AP0103GP-HF AP0103GP-HF14

Advanced Power Electronics Corp.
Part No. AP0103GP-HF AP0103GP-HF14
OCR Text ...0v, i d =40a - - 2.99 m ? v gs =4.5v, i d =30a - - 4.2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward trans...32v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 119.92K  /  4 Page

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